NTGS3136P ,-20V, -5.8A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTGS3433 ,MOSFET -3.3 Amps, -12 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3 & 4)ACharacteristic Symbol Mi ..
NTGS3433T1 ,MOSFET -3.3 Amps, -12 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JP−ChannelRating Symbol Value Unit12 5 6DRAINDrai ..
NTGS3433T1G , MOSFET -3.3 Amps, -12 Volts
NTGS3441 ,Power MOSFET 1 Amp, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 4 & 5)ACharacteristic Symbol Mi ..
NTGS3441T1 ,Power MOSFET 1 Amp, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit3Drain−to−Source Voltage ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTGS3136P
-20V, -5.8A, Single P-Channel, TSOP-6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain-to-Source Breakdown Voltage V V = 0 V, I = -250 A -20 V(BR)DSS GS DDrain-to-Source Breakdown Voltage V /T -13 mV/°C(BR)DSS JID = -250 A, Reference 25°CTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C -1.0 AJDSS V = 0 V,GSV = -20 VDST = 85°C -5.0JGate-to-Source Leakage Current I V = 0 V, V = ±8.0 V 0.1 AGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = -250 A -0.4 -1.0 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 3 mV/°CGS(TH) JV = -4.5 V, I = -5.1 A 25 33Drain-to-Source On Resistance R mDS(on) GS DV = -2.5 V, I = -4.5 A32 40GS DV = -1.8 V, I = -2.5 A 41 51GS DForward Transconductance g V = -5.0 V, I = -5.1 A 22 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 1901 pFISSOutput Capacitance C V = 0 V, f = 1 MHz, V = -10 V 274OSS GS DSReverse Transfer Capacitance C 175RSSTotal Gate Charge Q 18 29 nCG(TOT)Threshold Gate Charge Q 0.7G(TH)V = -4.5 V, V = -10 V;GS DSI = -5.1 ADGate-to-Source Charge Q 2.4GSGate-to-Drain Charge Q 4.3GDGate Resistance R 7.6GSWITCHING CHARACTERISTICS (Note 6)Turn-On Delay Time t 9 19 nsd(ON)Rise Time T 9 19r V = *4.5 V, V = -10 V,GS DDI = -1.0 A, R = 6.0 D GTurn-Of f Delay Time t 99 160d(OFF)Fall Time T 48 79fDRAIN-SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, T = 25°C -0.7 -1.2 VJSD GSI = -1.7 AST = 125°C -0.6JReverse Recovery Time t 37 60 nsV = 0 V, d /d = 100 A/s,RR GS IS tI = -1.7 AS5. Pulse Test: pulse width 300 s, duty cycle 2%6. Switching characteristics are independent of operating junction temperatures
