NTGS3130N ,Power MOSFET 20 V, 5.6 A, Single N-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Test Condition M ..
NTGS3130NT1G , Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6
NTGS3136P ,-20V, -5.8A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTGS3433 ,MOSFET -3.3 Amps, -12 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3 & 4)ACharacteristic Symbol Mi ..
NTGS3433T1 ,MOSFET -3.3 Amps, -12 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JP−ChannelRating Symbol Value Unit12 5 6DRAINDrai ..
NTGS3433T1G , MOSFET -3.3 Amps, -12 Volts
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
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OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
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NTGS3130N
Power MOSFET 20 V, 5.6 A, Single N-Channel, TSOP-6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain-to-Source Breakdown Voltage V V = 0 V; I = 250 A 20 V(BR)DSS GS DDrain-to-Source Breakdown VoltageV /T 9.8 mV/°C(BR)DSS JTemperature CoefficientV = 0 V; V = 16 V, GS DSZero Gate Voltage Drain Current I 1.0 ADSST = 25°CJGate-to-Source Leakage Current I V = 0, V = ±8 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V I = 250 A 0.4 0.6 1.4 VGS(TH) GS DS, DNegative Temperature Coefficient V /T 3.4 mV/°CGS(TH) JV = 4.5 V, I = 5.6 A 19 24GS DDrain-to-Source On-Resistance R mDS(on)V = 2.5 V, I = 4.9 A 25 32GS DForward Transconductance g V = 10 V, I = 5.6 A 8.2 SFS DS DCHARGES, CAPACITANCE, & GATE RESISTANCEInput Capacitance C 935ISSV = 0 V,GSOutput Capacitance C 169f = 1 MHz,OSSV = 16 VDSReverse Transfer Capacitance C 104RSSpFInput Capacitance C 965ISSV = 0 V,GSOutput Capacitance C f = 1 MHz, 198OSSV = 10 VDSReverse Transfer Capacitance C 110RSSTotal Gate Charge Q 13.2 20.3G(TOT)V = 4.5 VThreshold Gate Charge Q GS 0.60G(TH)V = 16 VDSGate-to-Source Charge Q 1.5 I = 5.6 AGSDGate-to-Drain Charge Q 4.2GDnCTotal Gate Charge Q 11.8 18.0G(TOT)V = 4.5 VThreshold Gate Charge Q 0.6GSG(TH)V = 5.0 VDSGate-to-Source Charge Q 1.4GS I = 6.2 ADGate-to-Drain Charge Q 2.7GDSWITCHING CHARACTERISTICS, V = 4.5 V (Note 4)GSTurn-On Delay Time t 6.3 12.6d(ON)V = 4.5 V,GSRise Time t 7.3 13.5rV = 16 V,DDnsI = 1 A,DTurn-Of f Delay Time t 21.7 35.1d(OFF) R = 3 GFall Time t 9.7 17.6fDRAIN-SOURCE DIODE CHARACTERISTICSV = 0 V,GSForward Diode Voltage V T = 25°C 0.7 1.2 VSD JI = 1.0 ASReverse Recovery Time t 20.4RRV = 0 Vdc,Charge Time t GS 8.1 nsadI /dt = 100 A/s,SDDischarge Time t 11.6I = 1.0 AbSReverse Recovery Charge Q 8.8 nCRR3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperature.
