NTGD4167C ,Complementary, 30V, +2.9/-2.2 A, TSOP-6 DualELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTGS3130N ,Power MOSFET 20 V, 5.6 A, Single N-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Test Condition M ..
NTGS3130NT1G , Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6
NTGS3136P ,-20V, -5.8A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTGS3433 ,MOSFET -3.3 Amps, -12 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3 & 4)ACharacteristic Symbol Mi ..
NTGS3433T1 ,MOSFET -3.3 Amps, -12 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JP−ChannelRating Symbol Value Unit12 5 6DRAINDrai ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTGD4167C
Complementary, 30V, +2.9/-2.2 A, TSOP-6 Dual
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V N 30 VI = 250 A(BR)DSS DV = 0 VGSP I = −250 A−30DDrain−to−Source Breakdown Voltage V /T N 21.4 mV/°C(BR)DSS JTemperature CoefficientP 22.2Zero Gate Voltage Drain Current I N V = 0 V, V = 24 V 1.0 ADSS GS DST = 25 °CJP−1.0V = 0 V, V = −24 VGS DSN V = 0 V, V = 24 V 10GS DST = 85 °CJP V = 0 V, V = −24 V−10GS DSGate−to−Source Leakage Current I N V = 0 V, V = ±12 V ±100 nAGSS DS GSP V = 0 V, V = ±12 V ±100DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V N I = 250 A 0.5 0.9 1.5 VGS(TH)DV = VGS DSP I = −250 A−0.5−1.1−1.5DDrain−to−Source On Resistance R N 52 90V = 4.5 V , I = 2.6 ADS(on) GS DV = 2.5 V , I = 2.2 A 67 125GS DmP V = −4.5 V , I = −1.9 A 130 170GS DV = −2.5 V, I = −1.0 A 202 300GS DForward Transconductance g N V = 15 V, I = 2.6 A 2.6 SFS DS DP V = −15 V , I = −1.9 A 2.6DS DCHARGES AND CAPACITANCESInput Capacitance C 295ISSOutput Capacitance C 48N V = 15 VOSSDSReverse Transfer Capacitance C 27RSSf = 1 MHz, V = 0 V pFGSInput Capacitance C 419ISSOutput Capacitance C 51OSS P V = −15 VDSReverse Transfer Capacitance C 26RSSTotal Gate Charge Q 3.7 5.5G(TOT)Threshold Gate Charge Q 0.6G(TH)N V = 4.5 V, V = 15 V, I = 2.0 AGS DS DGate−to−Source Gate Charge Q 0.9GSGate−to−Drain “Miller” Charge Q 0.8GDnCTotal Gate Charge Q 3.9 6.0G(TOT)Threshold Gate Charge Q 0.6G(TH)P V = −4.5 V, V = −15 V, I = −2.0 AGS DS DGate−to−Source Gate Charge Q 1.0GSGate−to−Drain “Miller” Charge Q 1.0GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 7.0 nsd(ON)Rise Time t 4.0r NV = 4.5 V, V = 15 V,GS DDI = 1.0 A, R = 6.0 D GTurn−Off Delay Time t 14d(OFF)Fall Time t 2.0fTurn−On Delay Time t 8.0d(ON)Rise Time t 8.0rV = −4.5 V, V = −15 V,GS DDPI = −1.0 A, R = 6.0 D GTurn−Off Delay Time t 22d(OFF)Fall Time t 8.0f2. Pulse Test: pulse width 300 s, duty cycle 2%.
