NTF6P02 ,20V P-ch HD3e SOT223MAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain–to–Source Voltage ..
NTF6P02T3 ,20V P-ch HD3e SOT223ELECTRICAL CHARACTERISTICS12 12–2.2 V T = 25°CJ–10 VV ≥ –10 VDS–2.0 V–7.0 V10–5.0 V9–2.4 V8–3.2 V–1 ..
NTF6P02T3G ,20V P-ch HD3e SOT223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTFS2405MC , Isolated 1W Wide Input DC/DC Converters
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NTGD3133PT1G , Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
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OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
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NTF6P02-NTF6P02T3-NTF6P02T3G
20V P-ch HD3e SOT223
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain–to–Source Breakdown Voltage (Note 4) V Vdc(BR)DSS(V = 0 Vdc, I = –250 Adc) –20 –25 –GS DTemperature Coefficient (Positive) – –11 – mV/°CZero Gate Voltage Drain Current I AdcDSS(V = –20 Vdc, V = 0 Vdc) – – –1.0DS GS(V = –20 Vdc, V = 0 Vdc, T = 125°C) – – –10DS GS JGate–Body Leakage Current (V = ± 8.0 Vdc, V = 0 Vdc) I – – ± 100 nAdcGS DS GSSON CHARACTERISTICS (Note 4)Gate Threshold Voltage (Note 4) V VdcGS(th)(V = V , I = –250 Adc) –0.4 –0.7 –1.0DS GS DThreshold Temperature Coefficient (Negative)– 2.6 – mV/°CStatic Drain–to–Source On–Resistance (Note 4) R mDS(on)(V = –4.5 Vdc, I = –6.0 Adc) – 44 50GS D(V = –2.5 Vdc, I = –4.0 Adc) – 57 70GS D(V = –2.5 Vdc, I = –3.0 Adc) – 57 –GS Dg – 12 – MhosForward Transconductance (Note 4) (V = –10 Vdc, I = –6.0 Adc)fsDS DDYNAMIC CHARACTERISTICSInput Capacitance (V = –16 Vdc, V = 0 V, C – 900 1200 pFDS GSissf f = 1.0 MHz) 10MH )Output Capacitance C – 350 500ossTransfer Capacitance C – 90 150rssInput Capacitance (V = –10 Vdc, V = 0 V, C – 940 – pFDS GS issf f = 1.0 MHz) 10MH )Output Capacitance C – 410 –ossTransfer Capacitance C – 110 –rssSWITCHING CHARACTERISTICS (Note 5)Turn–On Delay Time (V = –5.0 Vdc, I = –1.0 Adc, t – 7.0 12 nsDD D d(on)V V = –4.5 Vdc, 45VdGSRise Timet – 25 45rR R = 6.0 = 6.0 ) )G GTurn–Off Delay Time t – 75 125d(off)Fall Time t – 50 85fTurn–On Delay Time (V = –16 Vdc, I = –6.0 Adc, t – 8.0 – nsDD Dd(on)V V = –4.5 Vdc, 45VdGSRise Time t – 30 –rR R = 2.5 = 2.5 ) )G GTurn–Off Delay Time t – 60 –d(off)Fall Time t – 60 –fGate Charge (V = –16 Vdc, I = –6.0 Adc, Q – 15 20 nCDS D TV V = –4.5 Vdc) (Note 4) 45Vd )(N t 4)GSQ – 1.7 –gsQ – 6.0 –gdSOURCE–DRAIN DIODE CHARACTERISTICSForward On–Voltage (I = –3.0 Adc, V = 0 Vdc) (Note 4) V – –0.82 –1.2 VdcS GS SD(I = –2.1 Adc, V = 0 Vdc) – –0.74 –S GS(I = –3.0 Adc, V = 0 Vdc, T = 125°C) – –0.68 –S GS JReverse Recovery Time (I = –3.0 Adc, V = 0 Vdc, t – 42 – nsS GS rrdI dI /dt = 100 A/ /dt 100 A/s) (Note 4) )(N t 4)St – 17 –at – 25 –bReverse Recovery Stored Charge Q – 0.036 – CRR4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.5. Switching characteristics are independent of operating junction temperatures.
