NTF5P03T3D ,Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF6P02 ,20V P-ch HD3e SOT223MAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain–to–Source Voltage ..
NTF6P02T3 ,20V P-ch HD3e SOT223ELECTRICAL CHARACTERISTICS12 12–2.2 V T = 25°CJ–10 VV ≥ –10 VDS–2.0 V–7.0 V10–5.0 V9–2.4 V8–3.2 V–1 ..
NTF6P02T3G ,20V P-ch HD3e SOT223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
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NTF5P03T3D
Power MOSFET
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSV VdcDrain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 2 and 4)(BR)DSS–30 – –(V = 0 Vdc, I = –0.25 Adc)GS D– –28 – mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Drain Current I AdcDSS(V = –24 Vdc, V = 0 Vdc) – – –1.0DS GS(V = –24 Vdc, V = 0 Vdc, T = 125°C) – – –25DS GS JGate–Body Leakage Current (V = ± 20 Vdc, V = 0 Vdc) I – – ± 100 nAdcGS DS GSSON CHARACTERISTICS (Note 2)Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 2 and 4) V VdcGS(th)–1.0 –1.75 –3.0(V = V , I = –0.25 Adc)DS GS DThreshold Temperature Coefficient (Negative) – 3.5 – mV/°CR mStatic Drain–to–Source On–Resistance (Cpk ≥ 2.0) (Notes 2 and 4)DS(on)– 76 100(V = –10 Vdc, I = –5.2 Adc)GS D107 150(V = –4.5 Vdc, I = –2.6Adc)GS DForward Transconductance (Note 2) (V = –15 Vdc, I = –2.0 Adc) g 2.0 3.9 – MhosfsDS DDYNAMIC CHARACTERISTICSInput Capacitance (V = –25 Vdc, V = 0 V, C – 500 950 pFDS GS issf = 1.0 MHz) f 10MH )Output Capacitance C – 153 440ossTransfer Capacitance C – 58 140rssSWITCHING CHARACTERISTICS (Note 3)(V = –15 Vdc, I = –4.0 Adc, nsTurn–On Delay Time t – 10 24DD D d(on)V V = –10 Vdc, 10 VdGSRise Time t – 33 48rR R = 6.0 = 6.0 ) ) (Note (Note 2 2) )G GTurn–Off Delay Time t – 38 94d(off)Fall Time t – 20 92fTurn–On Delay Time (V = –15 Vdc, I = –2.0 Adc, t – 16 38 nsDD D d(on)V V = –10 Vdc, 10 VdGSRise Time t – 45 110rR R = 6.0 = 6.0 ) ) (Note (Note 2 2) )G GTurn–Off Delay Time t – 23 60d(off)Fall Time t – 24 80fGate Charge (V = –24 Vdc, I = –4.0 Adc, Q – 15 38 nCDS D TV V = –10 Vdc) (Note 2) 10 Vd ) (N t 2)GSQ – 1.6 –1Q – 3.5 –2Q3 – 2.6 –SOURCE–DRAIN DIODE CHARACTERISTICSForward On–Voltage (I = –4.0 Adc, V = 0 Vdc) V VdcS GS SD(I = –4.0 Adc, V = 0 Vdc, – –1.1 –1.5S GST = 125°C) (Note 2) – –0.89 –JReverse Recovery Time (I = –4.0 Adc, V = 0 Vdc, t – 34 – nsS GS rrdI dI /dt = 100 A/ /dt 100 A/s) (Note 2) )(N t 2)St – 20 –at – 14 –bReverse Recovery Stored Charge Q – 0.036 – CRR2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.3. Switching characteristics are independent of operating junction temperatures.4. Reflects typical values. Max limit Typ Cpk3 SIGMA
