NTF3055L175T3G ,Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-2232NTF3055L1753.2 3.2V ≥ 10 VDS2.82.8V = 3.5 VGS2.4 2.4V = 4 V V = 3 V2.0 2GS GS1.61.61.2 V = 5 V 1.2 ..
NTF3055L175T3LFG ,Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF5P03T3 ,Power MOSFET 5.2 Amps, 30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF5P03T3D ,Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF6P02 ,20V P-ch HD3e SOT223MAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain–to–Source Voltage ..
NTF6P02T3 ,20V P-ch HD3e SOT223ELECTRICAL CHARACTERISTICS12 12–2.2 V T = 25°CJ–10 VV ≥ –10 VDS–2.0 V–7.0 V10–5.0 V9–2.4 V8–3.2 V–1 ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTF3055L175-NTF3055L175T1-NTF3055L175T1G-NTF3055L175T3G-NTF3055L175T3LFG
Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSV VdcDrain−to−Source Breakdown Voltage (Note 3)(BR)DSS60 72.8 −(V = 0 Vdc, I = 250 Adc)GS D− 74.4 − mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Drain Current I AdcDSS(V = 60 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) − − 10DS GS JGate−Body Leakage Current (V = ± 15 Vdc, V = 0 Vdc) I − − ± 100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)1.0 1.7 2.0(V = V , I = 250 Adc)DS GS D− 4.2 − mV/°CThreshold Temperature Coefficient (Negative)R mStatic Drain−to−Source On−Resistance (Note 3)DS(on)− 155 175(V = 5.0 Vdc, I = 1.0 Adc)GS DV VdcStatic Drain−to−Source On−Resistance (Note 3)DS(on)− 0.32 0.42(V = 5.0 Vdc, I = 2.0 Adc)GS D0.57 −(V = 5.0 Vdc, I = 1.0 Adc, T = 150°C)GS D JForward Transconductance (Note 3) (V = 8.0 Vdc, I = 1.5 Adc) g − 3.2 − MhosfsDS DDYNAMIC CHARACTERISTICSInput Capacitance C − 194 270 pFiss(V 25 Vd V 0V(V = 25 Vdc, V = 0 V,DS GSOutput Capacitance C − 70 100ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 29 40rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 10.2 20 nsd(on)(V = 30 Vdc, I = 2.0 Adc,Rise Time DD Dt − 21 40rV V = 5.0 Vdc, =50VdcGS GSTurn−Off Delay Time t − 14.3 30R R = 9.1 9.1 ) (Note 3) ) (Note 3) d(off)G GFall Time t − 15.3 30fGate Charge Q − 5.1 10 nCT(V (V = 48 Vdc, I 48 Vd I = 2.0 Adc, 20AdDS DQ − 1.4 −1V V = 5.0 Vdc = 5.0 Vdc) ) ( (Note Note 3 3) )GS GSQ − 2.5 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 2.0 Adc, V = 0 Vdc) V VdcS GS SD(I = 2.0 Adc, V = 0 Vdc, − 0.84 1.0S GST = 150°C) (Note 3) − 0.68 −JReverse Recovery Time t − 28.3 − nsrrt − 15.6 −a(I (I = 2.0 Adc, V 2.0 Adc, V = 0 Vdc, 0 Vdc,S S GS GSdI /dt = 100 A/s) (Note 3)St − 12.7 −bReverse Recovery Stored Charge Q − 0.027 − CRR3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.4. Switching characteristics are independent of operating junction temperatures.
