NTF3055L108T1G ,N-Channel SOT-223NTF3055L108Preferred DevicePower MOSFET3.0 A, 60 V, Logic LevelN−Channel SOT−223Designed for low vo ..
NTF3055L108T3 ,N-Channel SOT-2232NTF3055L1086 6V = 3.4 VGS V > = 10 VDS5 5V = 3.5 VGSV = 4.5 VGSV = 3.2 VGS44V = 6 VGS3 3V = 3 VGST ..
NTF3055L108T3G ,N-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value Unit4Drain−to−Source Voltage ..
NTF3055L108T3LF ,N-Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
NTF3055L108T3LFG ,N-Channel SOT-223FeaturesR = 120 mDS(on)• Pb−Free Packages are AvailableN−ChannelApplicationsD• Power Supplies• Con ..
NTF3055L175 ,Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
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NTF3055L108-NTF3055L108T1G-NTF3055L108T3-NTF3055L108T3G-NTF3055L108T3LF-NTF3055L108T3LFG
N-Channel SOT-223
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSV VdcDrain−to−Source Breakdown Voltage (Note 3)(BR)DSS60 68 −(V = 0 Vdc, I = 250 Adc)GS D− 68 − mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Drain Current I AdcDSS(V = 60 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) − − 10DS GS JGate−Body Leakage Current (V = ± 15 Vdc, V = 0 Vdc) I − − ± 100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)1.0 1.68 2.0(V = V , I = 250 Adc)DS GS D− 4.6 − mV/°CThreshold Temperature Coefficient (Negative)R mStatic Drain−to−Source On−Resistance (Note 3)DS(on)− 92 120(V = 5.0 Vdc, I = 1.5 Adc)GS DV VdcStatic Drain−to−Source On−Resistance (Note 3)DS(on)− 0.290 0.43(V = 5.0 Vdc, I = 3.0 Adc)GS D0.250 −(V = 5.0 Vdc, I = 1.5 Adc, T = 150°C)GS D JForward Transconductance (Note 3) (V = 7.0 Vdc, I = 3.0 Adc) g − 5.7 − MhosfsDS DDYNAMIC CHARACTERISTICSInput Capacitance C − 313 440 pFiss(V 25 Vd V 0V(V = 25 Vdc, V = 0 V,DS GSOutput Capacitance C − 112 160ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 40 60rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 11 25 nsd(on)(V = 30 Vdc, I = 3.0 Adc,Rise Time DD Dt − 35 70rV V = 5.0 Vdc, =50VdcGS GSTurn−Off Delay Time t − 22 45R R = 9.1 9.1 ) (Note 3) ) (Note 3) d(off)G GFall Time t − 27 60fGate Charge Q − 7.6 15 nCT(V (V = 48 Vdc, I 48 Vd I = 3.0 Adc, 30AdDS DQ − 1.4 −1V V = 5.0 Vdc = 5.0 Vdc) ) ( (Note Note 3 3) )GS GSQ − 4.0 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 3.0 Adc, V = 0 Vdc) V VdcS GS SD(I = 3.0 Adc, V = 0 Vdc, − 0.87 1.0S GST = 150°C) (Note 3) − 0.72 −JReverse Recovery Time t − 35 − nsrrt − 21 −a(I (I = 3.0 Adc, V 3.0 Adc, V = 0 Vdc, 0 Vdc,S S GS GSdI /dt = 100 A/s) (Note 3)St − 14 −bReverse Recovery Stored Charge Q − 0.044 − CRR3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.4. Switching characteristics are independent of operating junction temperatures.
