NTF3055-160 ,Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF3055L108 ,N-Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF3055L108T1G ,N-Channel SOT-223NTF3055L108Preferred DevicePower MOSFET3.0 A, 60 V, Logic LevelN−Channel SOT−223Designed for low vo ..
NTF3055L108T3 ,N-Channel SOT-2232NTF3055L1086 6V = 3.4 VGS V > = 10 VDS5 5V = 3.5 VGSV = 4.5 VGSV = 3.2 VGS44V = 6 VGS3 3V = 3 VGST ..
NTF3055L108T3G ,N-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value Unit4Drain−to−Source Voltage ..
NTF3055L108T3LF ,N-Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
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NTF3055-160
Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSV VdcDrain–to–Source Breakdown Voltage (Note 3.)(BR)DSS60 72 –(V = 0 Vdc, I = 250 μAdc)GS D– 72 – mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Drain Current I μAdcDSS(V = 60 Vdc, V = 0 Vdc) – – 1.0DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C)– – 10DS GS JGate–Body Leakage Current (V = ± 20 Vdc, V = 0 Vdc) I – – ± 100 nAdcGS DS GSSON CHARACTERISTICS (Note 3.)Gate Threshold Voltage (Note 3.) V VdcGS(th)2.0 3.1 4.0(V = V , I = 250 μAdc)DS GS DThreshold Temperature Coefficient (Negative) – 6.6 – mV/°CR mΩStatic Drain–to–Source On–Resistance (Note 3.)DS(on)– 142 160(V = 10 Vdc, I = 1.0 Adc)GS DV VdcStatic Drain–to–Source On–Resistance (Note 3.)DS(on)– 0.142 0.384(V = 10 Vdc, I = 2.0 Adc)GS D0.270 –(V = 10 Vdc, I = 1.0 Adc, T = 150°C)GS D JForward Transconductance (Note 3.) (V = 8.0 Vdc, I = 1.5 Adc) g – 1.8 – MhosDS D fsDYNAMIC CHARACTERISTICSInput Capacitance C – 200 280 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 V 0 V,DS GSOutput Capacitance C – 68 100ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C – 26 40rssSWITCHING CHARACTERISTICS (Note 4.)Turn–On Delay Time t – 9.2 20 nsd(on)(V = 30 Vdc, I = 2.0 Adc,Rise TimeDD D t – 9.2 20rV V = 10 Vdc, =10VdcGS GSTurn–Off Delay Time t – 16 40R R = 9.1 9.1 Ω Ω) (Note 3.) ) (Note 3.) d(off)G GFall Time t – 9.2 20fGate Charge Q – 6.9 14 nCT(V (V = 48 Vdc, I 48 Vd I = 2.0 Adc, 2 0 AdDS DQ – 1.4 –1V V = 10 Vdc = 10 Vdc) ) ( (Note Note 3. 3.) )GS GSQ – 3.0 –2SOURCE–DRAIN DIODE CHARACTERISTICSForward On–Voltage (I = 2.0 Adc, V = 0 Vdc) V VdcS GS SD(I = 2.0 Adc, V = 0 Vdc, – 0.86 1.0S GST = 150°C) (Note 3.) – 0.70 –JReverse Recovery Time t – 28.9 – nsrrt – 19.1 –(I (I = 2.0 Adc, V 2.0 Adc, V = 0 Vdc, 0 Vdc, aS S GS GSdI /dt = 100 A/μs) (Note 3.)St – 9.8 –bReverse Recovery Stored Charge Q – 0.030 – μCRR3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.4. Switching characteristics are independent of operating junction temperatures.
