NTF3055-100T1 ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitMARKINGDIAGRAM4Drain−to−S ..
NTF3055-100T3 ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF3055-100T3G ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
NTF3055-160 ,Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF3055L108 ,N-Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF3055L108T1G ,N-Channel SOT-223NTF3055L108Preferred DevicePower MOSFET3.0 A, 60 V, Logic LevelN−Channel SOT−223Designed for low vo ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTF3055-100-NTF3055-100T1-NTF3055-100T3-NTF3055-100T3G
Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSV VdcDrain−to−Source Breakdown Voltage (Note 3)(BR)DSS60 68 −(V = 0 Vdc, I = 250 Adc)GS D− 66 − mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Drain Current I AdcDSS(V = 60 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) − − 10DS GS JGate−Body Leakage Current (V = ± 20 Vdc, V = 0 Vdc) I − − ± 100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)2.0 3.0 4.0(V = V , I = 250 Adc)DS GS D− 6.6 − mV/°CThreshold Temperature Coefficient (Negative)R mStatic Drain−to−Source On−Resistance (Note 3)DS(on)− 88 110(V = 10 Vdc, I = 1.5 Adc)GS DV VdcStatic Drain−to−Source On−Resistance (Note 3)DS(on)− 0.27 0.40(V = 10 Vdc, I = 3.0 Adc)GS D0.24 −(V = 10 Vdc, I = 1.5 Adc, T = 150°C)GS D JForward Transconductance (Note 3) (V = 8.0 Vdc, I = 1.7 Adc) g − 3.2 − MhosfsDS DDYNAMIC CHARACTERISTICSInput Capacitance C − 324 455 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 V 0V,DS GSOutput Capacitance C − 35 50ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 110 155rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 9.4 20 nsd(on)(V = 30 Vdc, I = 3.0 Adc,Rise Time DD Dt − 14 30rV V = 10 Vdc, =10VdcGS GSTurn−Off Delay Time t − 21 45R R = 9.1 9.1 ) (Note 3) ) (Note 3) d(off)G GFall Time t − 13 30fGate Charge Q − 10.6 22 nCT(V (V = 48 Vdc, I 48 Vd I = 3.0 Adc, 30AdDS DQ − 1.9 −1V V = 10 Vdc = 10 Vdc) ) (Note (Note 3 3) )GS GSQ − 4.2 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 3.0 Adc, V = 0 Vdc) V VdcS GS SD(I = 3.0 Adc, V = 0 Vdc, − 0.89 1.0S GST = 150°C) (Note 3) − 0.74 −JReverse Recovery Time t − 30 − nsrrt − 22 −a(I (I = 3.0 Adc, V 3.0 Adc, V = 0 Vdc, 0 Vdc,S S GS GSdI /dt = 100 A/s) (Note 3)St − 8.6 −bReverse Recovery Stored Charge Q − 0.04 − CRR3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.4. Switching characteristics are independent of operating junction temperatures.
