NTD80N02T4 ,Power MOSFET 80 Amps, 24 Volts N-Channel DPAKMaximum ratings applied to the device are individual stress limit values (notDrainnormal operating ..
NTD80N02T4G ,Power MOSFET 80 Amps, 24 Volts N-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitSDrain−to−Source Voltage ..
NTD85N02R-001 ,Power Mosfet 85 A, 24 V, N-Channel DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on) D ..
NTD85N02R-1G , Power MOSFET 85 Amps, 24 Volts N-Channel DPAK
NTD85N02RG ,Power MOSFET 85 Amps / 24 Volts N-Channel DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on) D ..
NTD85N02RT4 ,Power Mosfet 85 A, 24 V, N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Min Typ Ma ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTD80N02-001-NTD80N02-1G-NTD80N02G-NTD80N02T4-NTD80N02T4G
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 24 27 −GS DPositive Temperature Coefficient − 25 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 0 Vdc, V = 24 Vdc) − − 1.0GS DS(V = 0 Vdc, V = 24 Vdc, T = 125°C) − − 10GS DS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.9 3.0DS GS DNegative Threshold Temperature Coefficient − −3.8 − mV/°CStatic Drain−to−Source On−Resistance (Note 3) R mΩDS(on)(V = 10 Vdc, I = 80 Adc) − 5.0 5.8GS D(V = 4.5 Vdc, I = 40 Adc) − 7.5 9.0GS D(V = 10 Vdc, I = 20 Adc) − 5.0 5.8GS D(V = 4.5 Vdc, I = 20 Adc) 7.5 9.0GS DForward Transconductance (V = 15 Vdc, I = 10 Adc) (Note 3) g − 20 − MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 2250 2600 pFiss(V (V = = 20 20 Vdc Vdc,,DS DSOutput Capacitance V V = 0 V 0 V, , C − 900 1100GS GS ossf = 1.0 MHz)Transfer Capacitance C − 400 525rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 17 30 nsd(on)(V (V = 4.5 =45V Vd dc, cGS GSRise Time t − 67 125rV V = 20 Vdc, = 20 Vdc,DD DDI = 20 Adc,Turn−Off Delay Time D D t − 28 45d(off)R = 2.5 Ω)R 25 Ω)GFall Time t − 40 75fGate Charge GaeC a ge Q − 30 42 nCT(V (V = = 4.5 4.5 Vdc, Vdc,GS GSQ1 − 7.0 12II = 20 Adc, 20 Adc,D DV = 20 Vdc) (Note 3)DSQ2 − 18 28SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage V VdcSD(I = 20 Adc, V = 0 Vdc) (Note 3) − 0.92 1.2S GS(I = 40 Adc, V = 0 Vdc) − 1.05 −S GS(I = 20 Adc, V = 0 Vdc, T = 150°C) − 0.70 −S GS JReverse Recovery T e e se eco e y ime e t − 38 52 ns srr(I (I = 20 Adc, V 20 Ad V = 0 Vdc, 0VdS GSt − 20 −adI dI /dt /dt = = 100 100 A/ A/ s s) ) (Note (Note 3) 3)S St − 18 −bReverse Recovery Stored Charge Q − 0.038 − Crr3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
