NTD78N03 ,Power MOSFET 25 V, 78 A, Single N-Channel, DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JParameter Symbol Value UnitN−ChannelDrain−to−Sour ..
NTD78N03-35G , Power MOSFET 25 V, 78 A, Single N−Channel, DPAK
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NTD78N03
Power MOSFET 25 V, 78 A, Single N-Channel, DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 25 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 24 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.5 ADSS JV = 0 V,GSV = 20 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 1.6 3.0 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T −5.0 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 V, I = 78 A 4.6 6.0 mDS(on) GS DV = 4.5 V, I = 36 A 6.5 7.8GS DForward Transconductance gFS V = 10 V, I = 15 A 22 SDS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 1920 2250issV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 960pFossV = 12 VDSReverse Transfer Capacitance C 420rssTotal Gate Charge Q 25.5 35G(TOT)Threshold Gate Charge Q 2.4G(TH)V = 4.5 V, V = 20 V,GS DSnCI = 20 ADGate−to−Source Charge Q 5.3GSGate−to−Drain Charge Q 18.2GDSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 11d(on)Rise Time t 68rV = 4.5 V, V = 20 V,GS DSnsI = 20 A, R = 3.0 D GTurn−Off Delay Time t 23d(off)Fall Time t 42fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.83 1.0 VSD JV = 0 V,GSI = 20 AST = 125°C 0.7JReverse Recovery Time t 39RRCharge Time ta 17.8nsV = 0 V, dIs/d = 100 A/s,GS tI = 20 ASDischarge Time tb 21Reverse Recovery Time Q 33 nCRRPACKAGE PARASITIC VALUESSource Inductance L 2.49SDrain Inductance L 0.02nHDTa = 25CGate Inductance L 3.46GGate Resistance R 1.0 G3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
