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NTD70N03R
Power MOSFET 72 Amps, 25 Volts N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain-to-Source Breakdown Voltage (Note 3) V V(br)DSS dc(V = 0 V , I = 250 A ) 25 28 -GS dc D dcTemperature Coefficient (Positive) - 20.5 - mV/°CZero Gate Voltage Drain Current I ADSSdc(V = 20 V , V = 0 V ) - - 1.5DS dc GS dc(V = 20 V , V = 0 V , T = 150°C) - - 10DS dc GS dc JGate-Body Leakage Current I nAGSS dc(V = ±20 V , V = 0 V ) - - ±100GS dc DS dcON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VGS(th) dc(V = V , I = 250 A ) 1.0 1.5 2.0DS GS D dc- 4.0 - mV/°CThreshold Temperature Coefficient (Negative)Static Drain-to-Source On-Resistance (Note 3) R mDS(on)(V = 4.5 V , I = 20 A ) - 8.1 13GS dc D dc(V = 10 V , I = 20 A ) - 5.6 8.0GS dc D dcForward Transconductance (Note 3) g MhosFS(V = 10 V , I = 15 A ) - 27 -DS dc D dcDYNAMIC CHARACTERISTICSInput Capacitance C - 1333 - pFISS(V = 20 V , V = 0 V,DS dc GSOutput Capacitance C - 600 -OSSf = 1 MHz)Transfer Capacitance C - 218 -RSSSWITCHING CHARACTERISTICS (Note 4)Turn-On Delay Time t - 6.9 - nsd(on)Rise Time t - 1.3 -r(V = 10 V , V = 10 V ,GS dc DD dcI = 36 A , R = 3)D dc GTurn-Off Delay Time t - 18.4 -d(off)Fall Time t - 5.5 -fGate Charge Q - 13.2 - nCT(V = 5 V , I = 36 A ,GS dc D dcQ - 3.3 -GSV = 10 V ) (Note 3)DS dcQ - 6.5 -DSSOURCE-DRAIN DIODE CHARACTERISTICSForward On-Voltage V VSD dc(I = 20 A , V = 0 V ) (Note 3)S dc GS dc- 0.86 1.2(I = 20 A , V = 0 V , T = 125°C)S dc GS dc J- 0.73 -Reverse Recovery Time t - 27.9 - nsrrt - 14.8 -a(I = 36 A , V = 0 V ,S dc GS dct - 13.1 -bdI /dt = 100 A/s) (Note 3)SReverse Recovery Stored Q - 19 - nCRRCharge3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.4. Switching characteristics are independent of operating junction temperatures.
