NTD65N03R ,Power MOSFET 25 V, 65 A, Single N-Channel, DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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NTD65N03R
Power MOSFET 25 V, 65 A, Single N-Channel, DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 25 29.5 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 19.2 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.5 ADSS V = 0 V, JGSV = 20 VT = 125°C 10DSJGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.0 1.74 2.0 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 4.8 mV/°CGS(TH) JV = 10 V, I = 30 A 6.5 8.4Drain−to−Source On Resistance R mDS(on) GS DV = 4.5 V, I = 30 A 9.7 14.6GS DForward Transconductance g V = 15 V, I = 15 A 27 mHosFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 1177 1400 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 555ossV = 20 VDSReverse Transfer Capacitance C 218rssTotal Gate Charge Q 12.2 16 nCG(TOT)Threshold Gate Charge Q 1.5G(TH)V = 5.0 V, V = 10 V,GS DSI = 30 AGate−to−Source Charge Q D 2.95GSGate−to−Drain Charge Q 6.08GDSWITCHING CHARACTERISTICS (Note 6)Turn−On Delay Time t 6.3 nsd(on)Rise Time t 18.6r V = 10 V, V = 25 V,GS DSI = 30 A, R = 3.0 Turn−Off Delay Time t D G 20.3d(off)Fall Time t 8.8fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.85 1.1 VSD JV = 0 V,GSI = 20 AS T = 125°C 0.72JReverse Recovery Time t 28.8nsRRCharge Time t 12.8a V = 0 V, dI /dt = 100 A/s,GS SI = 20 ADischarge Time t 16SbReverse Recovery Time Q 20 nCRRPACKAGE PARASITIC VALUESSource Inductance L 2.49SDrain Inductance L 0.02 nHDT = 25°CAGate Inductance L 3.46GGate Resistance R 1.75 G3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.15 in sq [1 oz] including traces).5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.6. Switching characteristics are independent of operating junction temperatures.
