NTD6416ANL ,Power MOSFET, N-Channel, 100 V, 19 A, 74 mΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD6416ANL-1G , N-Channel Power MOSFET 100 V, 19 A, 74 mΩ
NTD6416ANLT4G , N-Channel Power MOSFET 100 V, 19 A, 74 mΩ
NTD6416ANT4G , N-Channel Power MOSFET 100 V, 17 A, 81 m
NTD65N03R ,Power MOSFET 25 V, 65 A, Single N-Channel, DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD6600N ,Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
NTD6416ANL
Power MOSFET, N-Channel, 100 V, 19 A, 74 mΩ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 100 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 120 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current IT = 25°C 1.0 ADSSJV = 0 V, GSV = 100 VDS T = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.0 2.2 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.4 mV/°CGS(TH) JCoefficientDrainï toï Source Onï Resistance R mV = 4.5 V, I = 10 A 70 80DS(on)GS DV = 10 V, I = 10 A 62 74GS DV = 10 V, I = 19 A 68 74GS DForward Transconductance g V = 5 V, I = 10 A 18 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 700 1000 pFISSOutput Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 110OSSGS DSReverse Transfer Capacitance C 50RSSTotal Gate Charge Q 25 40 nCG(TOT)Threshold Gate Charge Q 0.7G(TH)Gateï toï Source Charge Q 2.4V = 10 V, V = 80 V, I = 19 AGS GS DS DGateï toï Drain Charge Q 9.6GDPlateau Voltage V 3.2 VGPGate Resistance R 2.4GSWITCHING CHARACTERISTICS (Note 3)nsTurnï On Delay Time t 7.0d(on)Rise Time t 16rV = 10 V, V = 80 V,GS DDI = 19 A, R = 6.1 Turnï Off Delay Time t D G 35d(off)Fall Time t 40fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.9 1.2 VSD JV = 0 V, I = 19 AGS ST = 125°C 0.72JReverse Recovery Time t 50 nsRRCharge Time T 38aV = 0 V, dI /dt = 100 A/s,GS SI = 19 ASDischarge Time T 14bReverse Recovery Charge Q 112 nCRR2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
