NTD6416AN ,Power MOSFET, N-Channel, 100 V, 17 A, 81 mΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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NTD6416ANL ,Power MOSFET, N-Channel, 100 V, 19 A, 74 mΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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NTD6416ANLT4G , N-Channel Power MOSFET 100 V, 19 A, 74 mΩ
NTD6416ANT4G , N-Channel Power MOSFET 100 V, 17 A, 81 m
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The 050758 is a hybrid sine/cosine power oscillator which can
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NTD6416AN
Power MOSFET, N-Channel, 100 V, 17 A, 81 mΩ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 100 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 112 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, GSV = 100 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(TH) GS DS DNegative Threshold Temperature V /T 7.7 mV/°CGS(TH) JCoefficientDrain−to−Source On−Resistance R V = 10 V, I = 17 A 73 81 mDS(on) GS DForward Transconductance g V = 5 V, I = 10 A 12 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 620 pFISSOutput Capacitance C 110V = 0 V, f = 1.0 MHz, V = 25 VOSSGS DSReverse Transfer Capacitance C 50RSSTotal Gate Charge Q 20 nCG(TOT)Threshold Gate Charge Q 1.0G(TH)Gate−to−Source Charge Q 3.6GS V = 10 V, V = 80 V, I = 17 AGS DS DGate−to−Drain Charge Q 10GDPlateau Voltage V 5.8 VGPGate Resistance R 2.4 GSWITCHING CHARACTERISTICS (Note 4)nsTurn−On Delay Time t 9.2d(on)Rise Time t 22rV = 10 V, V = 80 V,GS DDI = 17 A, R = 6.1 D GTurn−Off Delay Time t 24d(off)Fall Time t 20fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.85 1.2 VSD JV = 0 V, I = 17 AGS ST = 125°C 0.7JReverse Recovery Time t 56 nsrrCharge Time t 41aV = 0 V, dI /dt = 100 A/s,GS SI = 17 ASDischarge Time t 15bReverse Recovery Charge Q 135 nCRR2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
