NTD6415ANL ,NTD6415ANLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD6415ANLT4G , N-Channel Power MOSFET 100 V, 23 A, 56 mΩ, Logic Level
NTD6415ANT4G , N-Channel Power MOSFET 100 V, 23 A, 55 mΩ
NTD6416AN ,Power MOSFET, N-Channel, 100 V, 17 A, 81 mΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD6416AN-1G , N-Channel Power MOSFET 100 V, 17 A, 81 m
NTD6416ANL ,Power MOSFET, N-Channel, 100 V, 19 A, 74 mΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
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OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
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OV2640 , world smallest 2 megapixel CameraChip
NTD6415ANL
NTD6415ANL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 100 V(BR)DSS GS DV = 0 V, I = 250 A, T = −40°C 92GS D JDrain−to−Source Breakdown Voltage V /T 115 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, GSV = 100 VDST = 125°C 100JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V 1.0 2.0 VV = V , I = 250 AGS(TH) GS DS DNegative Threshold Temperature V /T 4.8 mV/°CGS(TH) JCoefficientDrain−to−Source On−Resistance R V = 4.5 V, I = 10 A 44 56 mDS(on)GS DV = 10 V, I = 10 A 43 52GS DForward Transconductance g V = 5.0 V, I = 10 A 24 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 1024 pFISSOutput Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 156OSSGS DSReverse Transfer Capacitance C 70RSSnCTotal Gate Charge Q 20G(TOT)Threshold Gate Charge Q 1.1G(TH)V = 4.5 V, V = 80 V, I = 23 AGS DS DGate−to−Source Charge Q 3.1GSGate−to−Drain Charge Q 14GDTotal Gate Charge Q V = 10 V, V = 80 V, I = 23 A 35 nCG(TOT) GS DS DSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 11 nsd(on)Rise Time t 91rV = 4.5 V, V = 80 V,GS DDI = 23 A, R = 6.1 Turn−Off Delay Time t D G 40d(off)Fall Time t 71fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.87 1.2 VSDJV = 0 V, I = 23 AGS ST = 125°C 0.74JReverse Recovery Time t 64 nsRRCharge Time T 40aV = 0 V, dI /dt = 100 A/s,GS SI = 23 ASDischarge Time T 24bReverse Recovery Charge Q 152 nCRR2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.ORDERING INFORMATION†Device Package ShippingNTD6415ANLT4G DPAK 2500 / Tape & Reel(Pb−Free)NVD6415ANLT4G DPAK 2500 / Tape & Reel(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecification Brochure, BRD8011/D.
