NTD6414AN ,N-Channel Power MOSFET 100 V, 32 A, 37 mOHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD6414AN-1G , N-Channel Power MOSFET 100 V, 32 A, 37 mΩ
NTD6414ANT4G , N-Channel Power MOSFET 100 V, 32 A, 37 mΩ
NTD6415AN ,Power MOSFET, 100 V, 23 A, 55 mΩ, N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD6415AN-1G , N-Channel Power MOSFET 100 V, 23 A, 55 mΩ
NTD6415ANL ,NTD6415ANLELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
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OV2640 , world smallest 2 megapixel CameraChip
NTD6414AN
N-Channel Power MOSFET 100 V, 32 A, 37 mOHM
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 100 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 107 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V, GSV = 100 VDST = 125°C 100JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(TH) GS DS DNegative Threshold Temperature V /T 8.3 mV/°CGS(TH) JCoefficientDrain−to−Source On−Resistance R V = 10 V, I = 32 A 30 37mDS(on) GS DForward Transconductance gFS V = 5.0 V, I = 10 A 18 SGS DCHARGES, CAPACITANCES AND GATE RESISTANCEpFInput Capacitance C 1450ISSOutput Capacitance C 230V = 0 V, f = 1.0 MHz, V = 25 VOSS GS DSReverse Transfer Capacitance C 95RSSTotal Gate Charge Q 40 nCG(TOT)Threshold Gate Charge Q 1.7G(TH)Gate−to−Source Charge Q V = 10 V, V = 80 V, I = 32 A 8.0GS GS DS DGate−to−Drain Charge Q 20GDPlateau Voltage V 5.9 VGPGate Resistance R 1.9 GSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 11 nsd(on)Rise Time t 52rV = 10 V, V = 80 V,GS DDI = 32 A, R = 6.1 Turn−Off Delay Time t D G 38d(off)Fall Time t 48fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.87 1.2 VSDJV = 0 V, I = 32 AGS ST = 125°C 0.76JReverse Recovery Time t 68 nsRRCharge Time T 51aV = 0 V, dI /dt = 100 A/s,GS SI = 32 ASDischarge Time T 16bReverse Recovery Charge Q 195 nCRR2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
