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NTD60N03ONN/a3avaiPower MOSFET 60 Amps, 28 Volts N-Channel DPAK


NTD60N03 ,Power MOSFET 60 Amps, 28 Volts N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
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NTD60N03
Power MOSFET 60 Amps, 28 Volts N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 28 30.6−GS DTemperature Coefficient (Positive)− 25− mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 0 Vdc, V = 28 Vdc)−− 1.0GS DS(V = 0 Vdc, V = 28 Vdc, T = 150°C)−− 10GS DS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I−−±100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.9 3.0DS GS DThreshold Temperature Coefficient (Negative)−−3.8− mV/°CStatic Drain−to−Source On−Resistance (Note 3) R mDS(on)(V = 10 Vdc, I = 30 Adc)− 6.1 7.5GS D(V = 4.5 Vdc, I = 30 Adc)− 9.2−GS D(V = 10 Vdc, I = 10 Adc)− 6.4−GS DForward Transconductance (V = 15 Vdc, I = 10 Adc) (Note 3) g− 20− MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C− 2150− pFiss(V = 24 Vdc, V = 0 Vdc,DS GSOutput Capacitance C− 680−ossf = 1.0 MHz)Transfer Capacitance C− 260−rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t− 10− nsd(on)(V = 15 Vdc, I = 15 Adc,DD DRise Time t− 18−rV = 10 Vdc,GSTurn−Off Delay Time t− 32−d(off)R = 3.3 )GFall Time t− 15−fGate Charge Q− 30− nCT(V = 24 Vdc, I = 15 Adc,DS DQ1− 6.5−V = 4.5 Vdc) (Note 3)GSQ2− 18.4−SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage V VdcSD(I = 2.3 Adc, V = 0 Vdc) (Note 3)− 0.75 1.0S GS(I = 30 Adc, V = 0 Vdc)− 1.2−S GS(I = 2.3 Adc, V = 0 Vdc, T = 150°C)− 0.65−S GS JReverse Recovery Time t− 39− nsrr(I = 2.3 Adc, V = 0 Vdc,S GSt− 21−adI /dt = 100 A/s) (Note 3)St− 18−bReverse Recovery Stored Charge Q− 0.043− Crr3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
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