NTD5862N ,Power MOSFET, N-Channel, 60 V, 98 A, 5.7 mΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5862NT4G , N-Channel Power MOSFET 60 V, 98 A, 5.7 m
NTD5865N ,Power MOSFET, 60 V, 43 A, 18 mΩ, N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5865N-1G , N-Channel Power MOSFET 60 V, 38 A, 18 m
NTD5865NL ,Power MOSFET, 60 V, 46 A, 16 mΩ, N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5865NL-1G , N-Channel Power MOSFET 60 V, 40 A, 16 mΩ
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
NTD5862N
Power MOSFET, N-Channel, 60 V, 98 A, 5.7 mΩ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V 60 VV = 0 V, I = 250 A(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 47 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 60 VDST = 150°C 100JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(TH) GS DS DThreshold Temperature Coefficient V /Tï 9.7 mV/°CGS(TH) JDrainï toï Source On Resistance R V = 10 V, I = 45 A 4.4 5.7 mDS(on) GS DForward Transconductance gFS V = 15 V, I = 10 A 18 SDS DCHARGES, CAPACITANCES AND GATE RESISTANCESInput Capacitance C 5050 6000 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 500 600ossV = 25 VDSReverse Transfer Capacitance C 300 420rssTotal Gate Charge Q 82 nCG(TOT)Threshold Gate Charge Q 5.2G(TH)V = 10 V, V = 48 V,GS DSI = 45 ADGateï toï Source Charge Q 24GSGateï toï Drain Charge Q 27GDGate Resistance R 0.6 GSWITCHING CHARACTERISTICS (Note 4)Turnï On Delay Time t 18 nsd(on)Rise Time t 70rV = 10 V, V = 48 V,GS DDI = 45 A, R = 2.5 D GTurnï Off Delay Time t 35d(off)Fall Time t 60fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V VT = 25°C 0.9 1.2SD JV = 0 V,GSI = 45 AST = 100°C 0.75JReverse Recovery Time t 38 nsRRCharge Time ta 20V = 0 V, dIs/dt = 100 A/s,GSI = 45 ASDischarge Time tb 18Reverse Recovery Charge Q 40 nCRR3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.ORDERING INFORMATIONOrder Number Package ShippingNTD5862Nï 1G DPAK (Straight Lead) 75 Units / Rail(Pbï Free)NTD5862NT4G DPAK (Pbï Free) 2500 / Tape & ReelNTP5862NG TOï 220AB (Pbï Free) 50 Units / RailFor information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
