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NTD5807NONN/a10000avaiPower MOSFET, 40 V, 23 A, Single N-Channel


NTD5807N ,Power MOSFET, 40 V, 23 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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NTD5807N
Power MOSFET, 40 V, 23 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 40 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 38 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 40 VDST = 150°C 100JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.4 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T−5.8 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 V, I = 5.0 A 20 31 mDS(on)GS DV = 4.5 V, I = 4.0 A 29 37GS DForward Transconductance gFS V = 10 V, I = 15 A 8.1 SDS DCHARGES, CAPACITANCES AND GATE RESISTANCESInput Capacitance C 603 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 96ossV = 25 VDSReverse Transfer Capacitance C 73rssTotal Gate Charge Q 12.6 20 nCG(TOT)Threshold Gate Charge Q 0.76G(TH)V = 10 V, V = 20 V,GS DSI = 5.0 ADGate−to−Source Charge Q 2.2GSGate−to−Drain Charge Q 3.1GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 11.2 nsd(on)Rise Time t 111rV = 4.5 V, V = 20 V,GS DDI = 30 A, R = 2.5 D GTurn−Off Delay Time t 11.2d(off)Fall Time t 3.2fTurn−On Delay Time t 6.7 nsd(on)Rise Time t 20.4rV = 10 V, V = 20 V,GS DDI = 30 A, R = 2.5 Turn−Off Delay Time t D G 15.6d(off)Fall Time t 2.0fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V VT = 25°C 0.91 1.2SD JV = 0 V,GSI = 10 AST = 150°C 0.76JReverse Recovery Time t 15.7 nsRRCharge Time ta 10.75V = 0 V, dIs/dt = 100 A/s,GSI = 30 ASDischarge Time tb 5.0Reverse Recovery Charge Q 6.1 nCRR2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
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