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NTD5806NONN/a10000avaiPower MOSFET, 40 V, 33 A, Single N-Channel


NTD5806N ,Power MOSFET, 40 V, 33 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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NTD5806N
Power MOSFET, 40 V, 33 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 40 45.5 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 29.5 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current IT = 25°C 1.0 ADSS JV = 0 V,GSV = 40 VDST = 150°C 100JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.4 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.8 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 V, I = 15 A 12.7 19 mDS(on) GS DV = 4.5 V, I = 10 A 17.8 26GS DCHARGES, CAPACITANCES AND GATE RESISTANCESInput Capacitance C 860 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 130ossV = 25 VDSReverse Transfer Capacitance C 100rssTotal Gate Charge Q 17 38 nCG(TOT)Threshold Gate Charge Q 0.95G(TH)V = 10 V, V = 20 V,GS DSI = 30 ADGate−to−Source Charge Q 3.4GSGate−to−Drain Charge Q 4.5GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 10.6 nsd(on)Rise Time t 93.7rV = 4.5 V, V = 20 V,GS DDI = 30 A, R = 2.5 D GTurn−Off Delay Time t 14.2d(off)Fall Time t 4.3fnsTurn−On Delay Time t 8.0d(on)Rise Time t 49rV = 10 V, V = 20 V,GS DDI = 30 A, R = 2.5 D GTurn−Off Delay Time t 19.8d(off)Fall Time t 2.6fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.86 1.2 VSD JV = 0 V,GSI = 10 AST = 150°C 0.69JReverse Recovery Time t 18.8 nsRRCharge Time ta 11.8V = 0 V, dIs/dt = 100 A/s,GSI = 30 ASDischarge Time tb 7.0Reverse Recovery Charge Q 10.9 nCRR2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
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