NTD5805N ,Power MOSFET, 40 V, 51 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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The 050758 is a hybrid sine/cosine power oscillator which can
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NTD5805N
Power MOSFET, 40 V, 51 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 40 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 40.8 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 40 VDST = 150°C 100JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 7.04 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 V, I = 15 A 7.6 9.5 mDS(on)GS DV = 5.0 V, I = 10 A 10.9 16GS DForward Transconductance gFS V = 15 V, I = 15 A 8.54 SDS DCHARGES, CAPACITANCES AND GATE RESISTANCESInput Capacitance C 1725 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 220ossV = 25 VDSReverse Transfer Capacitance C 160rssTotal Gate Charge Q 33 80 nCG(TOT)Threshold Gate Charge Q 2.0G(TH)V = 10 V, V = 32 V,GS DSI = 30 ADGate−to−Source Charge Q 7.2GSGate−to−Drain Charge Q 9.8GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 10.2 nsd(on)Rise Time t 17.9rV = 10 V, V = 32 V,GS DDI = 30 A, R = 2.5 D GTurn−Off Delay Time t 22.9d(off)Fall Time t 4.5fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.83 1.2 VSD JV = 0 V,GSI = 10 AST = 150°C 0.65JReverse Recovery Time t 24.8 nsRRCharge Time ta 14.6V = 0 V, dIs/dt = 100 A/s,GSI = 30 ASDischarge Time tb 10.2Reverse Recovery Charge Q 15.5 nCRR2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
