NTD5803N ,NTD5803NELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5803NT4G , Power MOSFET 40 V, 76 A, Single N−Channel, DPAK
NTD5804N ,40 V, 69 A, Single N−Channel, DPAK, 8.5 m脵 RDS(on)ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5804NT4G , Power MOSFET 40 V, 69 A, Single N−Channel, DPAK
NTD5805N ,Power MOSFET, 40 V, 51 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5805NT4G , Power MOSFET 40 V, 51 A, Single N−Channel, DPAK
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
NTD5803N
NTD5803N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V 40 VV = 0 V, I = 250 A(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 40 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 40 VDST = 150°C 100JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 VGS(TH) GS DS DNegative Threshold Temperature V /Tï 7.4 mV/°CGS(TH) JCoefficientDrainï toï Source On Resistance R V = 10 V, I = 50 A 4.9 7.2 mDS(on) GS DV = 5.0 V, I = 30 A 6.7 10.1GS DForward Transconductance gFS V = 15 V, I = 15 A 13.6 SDS DCHARGES, CAPACITANCES AND GATE RESISTANCESInput Capacitance C 3220 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 390ossV = 25 VDSReverse Transfer Capacitance C 270rssTotal Gate Charge Q 51 nCG(TOT)Threshold Gate Charge Q 3.8G(TH)V = 10 V, V = 20 V,GS DSI = 50 ADGateï toï Source Charge Q 12.7GSGateï toï Drain Charge Q 12.7GDSWITCHING CHARACTERISTICS (Note 3)Turnï On Delay Time t 12.6 nsd(on)Rise Time t 21.4rV = 10 V, V = 32 V,GS DDI = 50 A, R = 2.0 D GTurnï Off Delay Time t 28.3d(off)Fall Time t 6.6fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.88 1.2 VSD JV = 0 V,GSI = 30 AST = 150°C 0.73JReverse Recovery Time t 27.2 nsRRCharge Time ta 14V = 0 V, dIs/dt = 100 A/s,GSI = 30 ASDischarge Time tb 13.2Reverse Recovery Charge Q 17 nCRR2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.ORDERING INFORMATIONOrder Number Package ShippingNTD5803NG IPAK (Straight Lead DPAK) 75 Units / Rail(Pbï Free)NTD5803NT4G DPAK 2500 / Tape & Reel(Pbï Free)For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
