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NTD5406NONN/a10000avaiPower MOSFET, 40 V, 70 A, Single N-Channel


NTD5406N ,Power MOSFET, 40 V, 70 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
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NTD5406N
Power MOSFET, 40 V, 70 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 40 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 42 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0 ADSS GS JV = 40 VDST = 100°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±30 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 VGS(TH) GS DS DGate Threshold Temperature V /T−7.0 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 V, I = 30 A 8.7 10 mDS(on)GS DV = 5.0 V, I = 10 A 13.2 17GS DForward Transconductance g V = 10 V, I = 10 A 19 SFS GS DCHARGES AND CAPACITANCESInput Capacitance C 1375 2500 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 370 700OSSV = 32 VDSReverse Transfer Capacitance C 160 300RSSTotal Gate Charge Q 45 nCG(TOT)Threshold Gate Charge Q 2.0G(TH)V = 10 V, V = 32 V, GS DSI = 30 ADGate−to−Source Charge Q 5.4GSGate−to−Drain Charge Q 20GDSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurn−On Delay Time t 7.2 nsd(ON)Rise Time t 57rV = 10 V, V = 32 V, GS DDI = 30 A, R = 2.5 D GTurn−Off Delay Time t 30d(OFF)Fall Time t 67fSWITCHING CHARACTERISTICS, V = 5 V (Note 3)GSTurn−On Delay Time t 15 nsd(ON)Rise Time t 147rV = 5.0 V, V = 20 V, GS DDI = 30 A, R = 2.5 D GTurn−Off Delay Time t 20d(OFF)Fall Time t 29fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.82 1.1 VSD JV = 0 V, GSI = 10 AST = 125°C 0.67JReverse Recovery Time t 46 nsRRCharge Time t 24aV = 0 V, dI /dt = 100 A/s, GS SDI = 10 ASDischarge Time t 22bReverse Recovery Charge Q 65 nCRR2. Pulse Test: pulse width ≤ 300 s, duty cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
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