NTD50N03R ,Power MOSFET 25 V, 45 A, Single N-Channel, DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
NTD50N03R
Power MOSFET 25 V, 45 A, Single N-Channel, DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 25 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T −16 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.5 ADSS JV = 0 V,GSV = 20 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.0 1.7 2.0 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T −5.0 mV/°CGS(TH) JDrain−to−Source On Resistance R I = 30 A 12 mDS(on) DV = 11.5 VGSI = 15 A 11.7DV = 10 V I = 30 A 12.5 14GS DI = 30 A 21DV = 4.5 VGSI = 15 A 19 23DForward Transconductance g V = 15 V, I = 15 A 15 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 610 750 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 300ossV = 12 VDSReverse Transfer Capacitance C 125rssTotal Gate Charge Q 6.0 10 nCG(TOT)Threshold Gate Charge Q 0.9G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 1.9GSGate−to−Drain Charge Q 3.7GDTotal Gate Charge Q 15 nCG(TOT)Threshold Gate Charge Q 1.0G(TH)V = 11.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 1.9GSGate−to−Drain Charge Q 3.9GD3. Surface−mounted on FR4 board using 1 sq in pad, 1 oz Cu.4. Surface−mounted on FR4 board using the minimum recommended pad size.5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
