NTD4970N ,Power MOSFET, 30 V, 36 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTD50N03R ,Power MOSFET 25 V, 45 A, Single N-Channel, DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD5406N ,Power MOSFET, 40 V, 70 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTD5406NT4G , Power MOSFET 40 V, 70 A, Single N−Channel, DPAK
NTD5407N ,Power MOSFET, 40 V, 38 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTD5407NT4G , Power MOSFET 40 V, 38 A, Single N−Channel, DPAK
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OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
NTD4970N
Power MOSFET, 30 V, 36 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V / 17(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0DSS GS JV = 24 V ADST = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.5 1.9 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 4.5GS(TH) JmV/°CCoefficientDrainï toï Source On Resistance R V = 10 V I = 30 A 8.3 11DS(on) GS DI = 15 A 8.2DmV = 4.5 V I = 30 A 14.6 21GS DI = 15 A 13.2DForward Transconductance g V = 1.5 V, I = 30 A 34 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 774ISSOutput Capacitance C V = 0 V, f = 1.0 MHz, V = 15 V 306 pFOSSGS DSReverse Transfer Capacitance C 161RSSTotal Gate Charge Q 8.2G(TOT)Threshold Gate Charge Q 1.5G(TH)V = 4.5 V, V = 15 V, I = 30 A nCGS DS DGateï toï Source Charge Q 3.0GSGateï toï Drain Charge Q 4.0GDTotal Gate Charge Q V = 10 V, V = 15 V, I = 30 A 15.8 nCG(TOT) GS DS DSWITCHING CHARACTERISTICS (Note 6)Turnï On Delay Time t 10d(ON)Rise Time t 27.6rV = 4.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurnï Off Delay Time t 12.5d(OFF)Fall Time t 5.7f5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.7. Assume terminal length of 110 mils.
