NTD4963N ,Power MOSFET, 30 V, 44 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTD4963N-1G , Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK
NTD4963N-35G , Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK
NTD4963NT4G , Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK
NTD4965N ,Power MOSFET, 30 V, 68 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTD4965N-1G , Power MOSFET 30 V, 68 A, Single N−Channel, DPAK/IPAK
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
NTD4963N
Power MOSFET, 30 V, 44 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V / 25(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0DSS GS JV = 24 V ADST = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.45 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 5GS(TH) JmV/°CCoefficientDrainï toï Source On Resistance R V = 10 V I = 30 A 8.2 9.6DS(on) GS DI = 15 A 8.2DmV = 4.5 V I = 30 A 13.6 16GS DI = 15 A 13.6DForward Transconductance g V = 1.5 V, I = 30 A 40 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 1035ISSOutput Capacitance C 220V = 0 V, f = 1.0 MHz, V = 12 V pFOSSGS DSReverse Transfer Capacitance C 115RSSTotal Gate Charge Q 8.1G(TOT)Threshold Gate Charge Q 1.2G(TH)V = 4.5 V, V = 15 V, I = 30 A nCGS DS DGateï toï Source Charge Q 3.5GSGateï toï Drain Charge Q 3.5GDTotal Gate Charge Q V = 10 V, V = 15 V, I = 30 A 16.2 nCG(TOT) GS DS DSWITCHING CHARACTERISTICS (Note 6)Turnï On Delay Time t 12d(ON)Rise Time t 20rV = 4.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurnï Off Delay Time t 14d(OFF)Fall Time t 3f5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.7. Assume terminal length of 110 mils.
