IC Phoenix
 
Home ›  NN21 > NTD4910N,Power MOSFET, 30 V, 37 A, Single N-Channel
NTD4910N Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
NTD4910NONN/a10000avaiPower MOSFET, 30 V, 37 A, Single N-Channel


NTD4910N ,Power MOSFET, 30 V, 37 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4910N-1G , Power MOSFET 30 V, 37 A, Single N−Channel, DPAK/IPAK
NTD4960NT4G , Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK
NTD4960NT4G , Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK
NTD4963N ,Power MOSFET, 30 V, 44 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTD4963N-1G , Power MOSFET 30 V, 44 A, Single N−Channel, DPAK/IPAK
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION The 050758 is a hybrid sine/cosine power oscillator which can provide 1 maxim ..


NTD4910N
Power MOSFET, 30 V, 37 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V 30 VV = 0 V, I = 250 A(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 15 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 24 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.0 1.6 2.2 VGS(TH) GS DS DNegative Threshold Temperature V /T 4.0 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 V mI = 30 A 7.5 9.0DS(on) GS DI = 15 A 7.5DV = 4.5 V I = 30 A 10.6 13GS DI = 15 A 10.6DForward Transconductance gFS V = 1.5 V, I = 30 A 40 SDS DCHARGES AND CAPACITANCESpFInput Capacitance C 1203issV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 460ossV = 15 VDSReverse Transfer Capacitance C 12.5rssnCTotal Gate Charge Q 6.8G(TOT)Threshold Gate Charge Q 1.95G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 3.9GSGate−to−Drain Charge Q 1.1GDTotal Gate Charge Q V = 10 V, V = 15 V, 15.4 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 6)Turn−On Delay Time t 11.6 nsd(on)Rise Time t 21.8r V = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 Turn−Off Delay Time t D G 16.5d(off)Fall Time t 4.2fTurn−On Delay Time t 7.3 nsd(on)Rise Time t 19.5rV = 10 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 20.2d(off)Fall Time t 2.0f5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.6. Switching characteristics are independent of operating junction temperatures.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED