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NTD4904NONN/a10000avaiPower MOSFET, 30 V, 79 A, Single N-Channel


NTD4904N ,Power MOSFET, 30 V, 79 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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NTD4904N
Power MOSFET, 30 V, 79 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V 30 VV = 0 V, I = 250 A(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 15 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 24 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.0 1.6 2.2 VGS(TH) GS DS DNegative Threshold Temperature V /T 4.0 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 V mI = 30 A 3.0 3.7DS(on) GS DI = 15 A 3.0DV = 4.5 V I = 30 A 4.0 5.5GS DI = 15 A 4.0DForward Transconductance gFS V = 1.5 V, I = 30 A 76 SDS DCHARGES AND CAPACITANCESpFInput Capacitance C 3052issV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 976ossV = 15 VDSReverse Transfer Capacitance C 23rssnCTotal Gate Charge Q 16.8G(TOT)Threshold Gate Charge Q 4.4G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 8.2GSGate−to−Drain Charge Q 3.0GDTotal Gate Charge Q V = 10 V, V = 15 V, 41 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 15.3 nsd(on)Rise Time t 19.8r V = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 Turn−Off Delay Time t D G 23.4d(off)Fall Time t 7.5fTurn−On Delay Time t 10.3 nsd(on)Rise Time t 20rV = 10 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 28.7d(off)Fall Time t 8.0f3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
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