NTD4860N ,Power MOSFET, 25 V, 65 A, Single N-ChannelMaximum Ratings may damage the device. MaximumWW =Work WeekRatingsare stressratings only.Functional ..
NTD4863N ,Power MOSFET, 25 V, 49 A, Single N-ChannelMaximum Ratings may damage the device. MaximumWW =Work WeekRatingsare stressratings only.Functional ..
NTD4863NAT4G , Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK
NTD4904N ,Power MOSFET, 30 V, 79 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4904N-1G , Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK
NTD4904NT4G , Power MOSFET 30 V, 79 A, Single N−Channel, DPAK/IPAK
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
NTD4860N
Power MOSFET, 25 V, 65 A, Single N-Channel
Maximum Ratings may damage the device. MaximumWW =Work WeekRatingsare stressratings only.Functionaloperationabove theRecommended4860N =Device CodeOperating Conditions is not implied. Extended exposure to stresses above theG =Pb--Free PackageRecommended Operating Conditions may affect device reliability.ORDERINGINFORMATIONSeedetailedorderingandshippinginformationinthepackagedimensions section on page 6 of this data sheet. SemiconductorComponents Industries,LLC,20101 Publication Order Number:June,2010 -- Rev.1NTD4860N/DYWW4860NGYWW4860NGYWW4860NGNTD4860NTHERMALRESISTANCEMAXIMUMRATINGSParameter Symbol Value UnitJunction--to--Case (Drain) R 3°C/WθJCJunction--to--TAB (Drain) R 3.5θJC--TABJunction--to--Ambient – Steady State (Note 1) R 75θJAJunction--to--Ambient – Steady State (Note 2) R 117θJA1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.2. Surface--mountedonFR4boardusingtheminimumrecommendedpadsize.ELECTRICALCHARACTERISTICS (T =25°C unless otherwise specified)JParameter Symbol TestCondition Min Typ Max UnitOFFCHARACTERISTICSDrain--to--Source Breakdown Voltage V V =0V,I =250 mA 25 V(BR)DSS GS DDrain--to--Source Breakdown Voltage V / 21(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V =0V, T =25°C 1.0DSS GS JV =20V mADST =125°C 10JGate--to--Source Leakage Current I V =0V,V =±20 V±100 nAGSS DS GSONCHARACTERISTICS (Note 3)Gate Threshold Voltage V V =V ,I =250 mA 1.45 2.5 VGS(TH)GS DS DNegative Threshold Temperature V /T 5.2GS(TH) JmV/°CCoefficientDrain--to--Source On Resistance R V =10V I =30A 6.1 7.5DS(on) GS DmΩV =4.5V I =30A 8.9 11.1GS DForward Transconductance g V =1.5V,I =15A 48 SFS DS DCHARGESANDCAPACITANCESInput Capacitance C 1308ISSOutput Capacitance C 342V =0V,f=1.0MHz,V =12V pFOSS GS DSReverse Transfer Capacitance C 169RSSTotalGate Charge Q 11 16.5G(TOT)Threshold Gate Charge Q 1.2G(TH)V =4.5V,V =15V,I =30A nCGS DS DGate--to--Source Charge Q 3.9GSGate--to--Drain Charge Q 4.7GDTotalGate Charge Q V =10V,V =15V,I =30A 21.8 nCG(TOT) GS DS DSWITCHINGCHARACTERISTICS (Note 4)Turn--On Delay Time t 12.2d(ON)Rise Time t 20.1rV =4.5V,V =15V,GS DSnsI =15A,R =3.0ΩD GTurn--Off Delay Time t 15.2d(OFF)FallTime t 4.3fTurn--On Delay Time t 7.1d(ON)Rise Time t 17rV =11.5V,V =15V,GS DSnsI =15A,R =3.0ΩD GTurn--Off Delay Time t 22d(OFF)FallTime t 2.3f3. Pulse Test: pulse width≤ 300 ms, duty cycle≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
