NTD4856N ,Power MOSFET, 25 V, 89 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTD4857NT4G , Power MOSFET 25 V, 78 A, Single N-Channel, DPAK/IPAK
NTD4858N ,Power MOSFET, 25 V, 73 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
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NTD4860N ,Power MOSFET, 25 V, 65 A, Single N-ChannelMaximum Ratings may damage the device. MaximumWW =Work WeekRatingsare stressratings only.Functional ..
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OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
NTD4856N
Power MOSFET, 25 V, 89 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 25 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V / 23(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0DSS GS JV = 20 V ADST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.45 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.9GS(TH) JmV/°CCoefficientDrain−to−Source On Resistance R V = 10 V I = 30 A 3.9 4.7DS(on)GS DmV = 4.5 V I = 30 A 5.3 6.8GS DForward Transconductance g V = 1.5 V, I = 15 A 73 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 2241ISSOutput Capacitance C V = 0 V, f = 1.0 MHz, V = 12 V 567 pFOSSGS DSReverse Transfer Capacitance C 279RSSTotal Gate Charge Q 18 27G(TOT)Threshold Gate Charge Q 3.4G(TH)V = 4.5 V, V = 15 V, I = 30 A nCGS DS DGate−to−Source Charge Q 6.7GSGate−to−Drain Charge Q 6.6GDTotal Gate Charge Q V = 10 V, V = 15 V, I = 30 A 38 nCG(TOT) GS DS DSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 15.7d(ON)Rise Time t 22.5rV = 4.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurn−Off Delay Time t 18.6d(OFF)Fall Time t 7.5fTurn−On Delay Time t 8.7d(ON)Rise Time t 17.5rV = 11.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurn−Off Delay Time t 27.2d(OFF)Fall Time t 4.0f3. Pulse Test: pulse width 300 s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
