NTD4815N ,Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTD4815N-35G , Power MOSFET 30 V, 35 A, Single N--Channel, DPAK/IPAK
NTD4815NT4G , Power MOSFET 30 V, 35 A, Single N--Channel, DPAK/IPAK
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OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
NTD4815N
Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V / 25(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25 °C 1DSS GS JV = 24 V ADST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.6GS(TH) JmV/°CCoefficientDrain−to−Source On Resistance R V = 10 V to I = 30 A 12 15DS(on) GSD11.5 VI = 15 A 11.5DmV = 4.5 VI = 30 A 21 25GS DI = 15 A 18.3DForward Transconductance g V = 15 V, I = 10 A 6.0 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 770ISSOutput Capacitance C 181V = 0 V, f = 1.0 MHz, V = 12 V pFOSSGS DSReverse Transfer Capacitance C 108RSSTotal Gate Charge Q 6.0 6.6G(TOT)Threshold Gate Charge Q 0.9G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGate−to−Source Charge Q 2.5GSGate−to−Drain Charge Q 3.1GDTotal Gate Charge Q V = 11.5 V, V = 15 V; 14.1 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 10.5d(ON)Rise Time t 21.4rV = 4.5 V, V = 15 V, I = 15 A,GS DS DnsR = 3.0 GTurn−Off Delay Time t 11.4d(OFF)Fall Time t 3.5f3. Pulse Test: pulse width 300 s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
