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NTD4813NHONN/a10000avaiPower MOSFET, 30 V, 40 A, Single N-Channel


NTD4813NH ,Power MOSFET, 30 V, 40 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
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NTD4813NH
Power MOSFET, 30 V, 40 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V / 24.5(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25 °C 1DSS GS JV = 24 V ADST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.4GS(TH) JmV/°CCoefficientDrain−to−Source On Resistance R V = 10 V to I = 30 A 10.9 13DS(on) GSD11.5 VI = 15 A 10.7DmV = 4.5 VI = 30 A 20.9 25.9GS DI = 15 A 18.5DForward Transconductance g V = 15 V, I = 10 A 6.7 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 940ISSOutput Capacitance C 201V = 0 V, f = 1.0 MHz, V = 12 V pFOSSGS DSReverse Transfer Capacitance C 115RSSTotal Gate Charge Q 7.1 10G(TOT)Threshold Gate Charge Q 1.6G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGate−to−Source Charge Q 3.4GSGate−to−Drain Charge Q 3.0GDTotal Gate Charge Q V = 11.5 V, V = 15 V; 18.2 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 10d(ON)Rise Time t 19.5rV = 4.5 V, V = 15 V, I = 15 A,GS DS DnsR = 3.0 GTurn−Off Delay Time t 10.3d(OFF)Fall Time t 2.9f3. Pulse Test: pulse width  300 s, duty cycle  2%.4. Switching characteristics are independent of operating junction temperatures.
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