NTD4813N ,Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAKMaximum Ratings may damage the device. MaximumRatings are stress ratings only.Functionaloperationab ..
NTD4813N-35G , Power MOSFET 30 V, 40 A, Single N--Channel, DPAK/IPAK
NTD4813NH ,Power MOSFET, 30 V, 40 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
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OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
NTD4813N
Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK
Maximum Ratings may damage the device. MaximumRatings are stress ratings only.Functionaloperationabove theRecommendedY =YearOperating Conditions is not implied. Extended exposure to stresses above theWW =Work WeekRecommended Operating Conditions may affect device reliability.4813N =Device CodeG =Pb--Free PackageORDERINGINFORMATIONSeedetailedorderingandshippinginformationinthepackagedimensions section on page 6 of this data sheet. Semiconductor Components Industries,LLC,20101 Publication Order Number:June,2010 -- Rev.6 NTD4813N/DYWW4813NGYWW4813NGYWW4813NGNTD4813NTHERMALRESISTANCEMAXIMUMRATINGSParameter Symbol Value UnitJunction--to--Case (Drain) R 4.25θJCJunction--to--TAB (Drain) R 3.5θJC--TAB°C/WJunction--to--Ambient – Steady State (Note 1) R 77.5θJAJunction--to--Ambient – Steady State (Note 2) R 118.5θJA1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.2. Surface--mountedonFR4boardusingtheminimumrecommendedpadsize.ELECTRICALCHARACTERISTICS (T =25°C unless otherwise specified)JParameter Symbol TestCondition Min Typ Max UnitOFFCHARACTERISTICSDrain--to--Source Breakdown Voltage V V =0V,I =250 mA 30 V(BR)DSS GS DDrain--to--Source Breakdown Voltage V / 24.5(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V =0V, T =25°C 1DSS GS JV =24V mADST =125°C 10JGate--to--Source Leakage Current I V =0V,V =±20 V±100 nAGSS DS GSONCHARACTERISTICS (Note 3)Gate Threshold Voltage V V =V ,I =250 mA 1.5 2.5 VGS(TH)GS DS DNegative Threshold Temperature V /T 5.4GS(TH) JmV/°CCoefficientDrain--to--Source On Resistance R V =10Vto I =30A 10.9 13DS(on) GS D11.5 VI =15A 10.3DmΩV =4.5V I =30A 18.6 24GS DI =15A 17.1DForward Transconductance g V =15V,I =10A 6.0 SFS DS DCHARGESANDCAPACITANCESInput Capacitance C 860ISSOutput Capacitance C V =0V,f=1.0MHz,V =12V 201 pFOSSGS DSReverse Transfer Capacitance C 115RSSTotal Gate Charge Q 6.9 7.9G(TOT)Threshold Gate Charge Q 1.2G(TH)V =4.5V,V =15V;I =30A nCGS DS DGate--to--Source Charge Q 3.1GSGate--to--Drain Charge Q 3.6GDTotal Gate Charge Q V =11.5V,V =15V; 15.6 nCG(TOT) GS DSI =30ADSWITCHINGCHARACTERISTICS (Note 4)Turn--On Delay Time t 10.5d(ON)Rise Time t 19.3rV =4.5V,V =15V,I =15A,GS DS DnsR =3.0ΩGTurn--Off Delay Time t 10.1d(OFF)Fall Time t 3.3f3. Pulse Test: pulse width≤ 300 ms, duty cycle≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
