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NTD4810N
Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 27 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSSJV = 0 V,GSV = 24 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.2 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 to mI = 30 A 8.0 10DS(on) GS D11.5 VI = 15 A 7.8DV = 4.5 VI = 30 A 12 15.7GS DI = 15 A 11DForward Transconductance g V = 15 V, I = 10 A 9.0 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 1165 1350 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 284 330ossV = 12 VDSReverse Transfer Capacitance C 154 200rssnCTotal Gate Charge Q 9.2 11G(TOT)Threshold Gate Charge Q 1.3G(TH) V = 4.5 V, V = 15 V,GS DSI = 30 AGate−to−Source Charge Q D 3.3GSGate−to−Drain Charge Q 4.4GDTotal Gate Charge Q V = 11.5 V, V = 15 V, 21 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)nsTurn−On Delay Time t 11.5d(on)Rise Time t 20.7rV = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 13.8d(off)Fall Time t 3.8fnsTurn−On Delay Time t 7.2d(on)Rise Time t 20.7r V = 11.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 Turn−Off Delay Time t D G 21.8d(off)Fall Time t 2.6f3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
