NTD4809NH ,Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4810N ,Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4810N-1G , Power MOSFET 30 V, 54 A, Single N--Channel, DPAK/IPAK
NTD4810N-35G , Power MOSFET 30 V, 54 A, Single N--Channel, DPAK/IPAK
NTD4810NH-1G , Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK
NTD4810NHT4G , Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK
OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
NTD4809NH
Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 25 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 24 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.1 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.7 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 to I = 30 A 7.0 9.0 mDS(on) GS D11.5 VI = 15 A 7.0DV = 4.5 V I = 30 A 10.45 12.5GS DI = 15 A 9.95DForward Transconductance g V = 15 V, I = 15 A 9.0 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 1596 2155 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 331 447ossV = 12 VDSReverse Transfer Capacitance C 190 294rssnCTotal Gate Charge Q 12.5 15G(TOT)Threshold Gate Charge Q 2.4 3.6G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 5.3 7.9GSGate−to−Drain Charge Q 5.1 7.7GDTotal Gate Charge Q V = 11.5 V, V = 15 V, 29.3 44 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 12.0 18 nsd(on)Rise Time t 20 30rV = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 14 21d(off)Fall Time t 5.0 7.5fTurn−On Delay Time t 7.0 10.4 nsd(on)Rise Time t 18 27rV = 11.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 22 33d(off)Fall Time t 3.0 4.6f3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
