NTD4809N ,Power MOSFET, 30 V, 58 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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NTD4809N
Power MOSFET, 30 V, 58 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 25 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 24 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature Coefficient V /T 5.7 mV/°CGS(TH) JDrain−to−Source On Resistance R V = 10 to I = 30 A 7.0 9.0 mDS(on) GS D11.5 VI = 15 A 7.0DV = 4.5 V I = 30 A 12 14GS DI = 15 A 11DForward Transconductance gFS V = 15 V, I = 15 A 9.0 SDS DCHARGES AND CAPACITANCESInput Capacitance C 1456 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 315ossV = 12 VDSReverse Transfer Capacitance C 200rssnCTotal Gate Charge Q 11 13G(TOT)Threshold Gate Charge Q 2.5G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 4.8GSGate−to−Drain Charge Q 5.0GDTotal Gate Charge Q V = 11.5 V, V = 15 V, 25 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 12.3 nsd(on)Rise Time t 21.3rV = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 15.1d(off)Fall Time t 5.3fTurn−On Delay Time t 7.0 nsd(on)Rise Time t 22.7rV = 11.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 25.3d(off)Fall Time t 2.8f3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
