NTD4806N ,Power MOSFET, 30 V, 76 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4806N-35G , Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
NTD4808N ,Power MOSFET, 30 V, 63 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTD4808N-1G , Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK
NTD4809N ,Power MOSFET, 30 V, 58 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4809N-1G , Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK
OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
NTD4806N
Power MOSFET, 30 V, 76 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 27 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSSJV = 0 V,GSV = 24 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 6.0 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 to 11.5 V I = 30 A 4.9 6.0 mDS(on) GS DI = 15 A 4.8DV = 4.5 V I = 30 A 7.9 9.4GSDI = 15 A 7.5DForward Transconductance gFS V = 15 V, I = 15 A 14 SDS DCHARGES AND CAPACITANCESpFInput Capacitance C 2142issV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 480ossV = 12 VDSReverse Transfer Capacitance C 251rssnCTotal Gate Charge Q 15 23G(TOT)Threshold Gate Charge Q 3.0G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 7.0GSGate−to−Drain Charge Q 7.0GDTotal Gate Charge Q V = 11.5 V, V = 15 V, 37 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 13.9 nsd(on)Rise Time t 29.7r V = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 Turn−Off Delay Time t D G 18.3d(off)Fall Time t 7.8fTurn−On Delay Time t 8.5 nsd(on)Rise Time t 23.8rV = 11.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 Turn−Off Delay Time t D G 26d(off)Fall Time t 4.7f3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
