NTD4302T4G ,Power MOSFET 68 Amps, 30 Volts N-Channel DPAK• Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Logic Level Gate Drive V R TYP I MAX ..
NTD4804N ,Power MOSFET, 30 V, 117 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4805N ,Power MOSFET, 30 V, 88 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4805N-1G , Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK
NTD4806N ,Power MOSFET, 30 V, 76 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4806N-35G , Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
NTD4302-NTD4302T4-NTD4302T4G
Power MOSFET 68 Amps, 30 Volts N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = 250 A) 30 − −GS DPositive Temperature Coefficient − 25 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 0 Vdc, V = 30 Vdc, T = 25°C) − − 1.0GS DS J(V = 0 Vdc, V = 30 Vdc, T = 125°C) − − 10GS DS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.9 3.0DS GS DNegative Temperature Coefficient − −3.8 −Static Drain−Source On−State Resistance R DS(on)(V = 10 Vdc, I = 20 Adc) − 0.0078 0.010GS D(V = 10 Vdc, I = 10 Adc) − 0.0078 0.010GS D(V = 4.5 Vdc, I = 5.0 Adc) − 0.010 0.013GS DForward Transconductance (V = 15 Vdc, I = 10 Adc) gFS − 20 − MhosDS DDYNAMIC CHARACTERISTICSInput Capacitance C − 2050 2400 pFiss(V (V = 24 Vdc, V 24 Vd V = 0 Vdc, 0VdDS GSOutput CapacitanceC − 640 800ossff=10 = 1.0 MH MHz) z)Reverse Transfer CapacitanceC − 225 310rssSWITCHING CHARACTERISTICS (Note 6)Turn−On Delay Time t − 11 20 nsd(on)(V = 25 Vdc, I = 1.0 Adc,DD DRise Time t − 15 25rV V = 10 Vdc, 10 VdcGSTurn−Off Delay Time t − 85 130d(off)R R = = 6 6..0 0 ) )G GFall Time t − 55 90fTurn−On Delay Time t − 11 20 nsd(on)(V = 25 Vdc, I = 1.0 Adc,DD DRise Time t − 13 20rV V = 10 Vdc, 10 VdcGSTurn−Off Delay Time t − 55 90d(off)R R = = 2.5 2.5 ) )G GFall Time t − 40 75fTurn−On Delay Time t − 15 − nsd(on)(V = 24 Vdc, I = 20 Adc,DD DRise Time t − 25 −rV V = 10 Vdc, 10 VdcGSTurn−Off Delay Time t − 40 −d(off)R = 2.5 )R = 2.5 )G GFall Time t − 58 −fG Gate Charge aeC a ge Q − 55 80 nCT(V (V = 24 Vdc, I 24 Vd I = 2.0 Adc, 20AdDS DQ (Q1) − 5.5 −gsV V = = 1 10 0 Vdc) Vdc)GS GSQ (Q2) − 15 −gdBODY−DRAIN DIODE RATINGS (Note 5)Diode Forward On−Voltage V VdcSD(I = 2.3 Adc, V = 0 Vdc) − 0.75 1.0S GS(I = 20 Adc, V = 0 Vdc) − 0.90 −S GS(I = 2.3 Adc, V = 0 Vdc, T = 125°C) − 0.65 −S GS JReverse Recovery T e e se eco e y ime e t − 39 65 ns srr(I (I = 2.3 Adc, V 23Ad V = 0 Vdc, 0VdS GSt − 20 −adI dI /dt /dt = = 100 100 A/ A/s) s)S St − 19 −bReverse Recovery Stored Charge Q − 0.043 − Crr5. Indicates Pulse Test: Pulse Width = 300 sec max, Duty Cycle ≤ 2%.6. Switching characteristics are independent of operating junction temperature.
