NTD40N03R ,Power MOSFET 45 Amps / 25 Volts / N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Ma ..
NTD40N03R-1G ,Power MOSFET 45 Amps, 25 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Ma ..
NTD40N03RG ,Power MOSFET 45 Amps, 25 Volts2NTD40N03R20 2010 V3.5 VV ≥ 10 VDS3.4 V8 V16 166 V4 V3.2 V12 1288T = 25°CJ3 V4 2.8 V4T = 125°CJV = ..
NTD40N03RT4 ,Power MOSFET 45 Amps, 25 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise specified)J Parameter Symbol Value UnitGDrain−to−Source ..
NTD40N03RT4G ,Power MOSFET 45 Amps, 25 Volts3R , DRAIN−TO−SOURCE RESISTANCE ()R , DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)DS(on) DS ..
NTD4302 ,Power MOSFET 68 Amps, 30 Volts N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
NTD40N03R
Power MOSFET 45 Amps / 25 Volts / N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V(br) VdcDSS(V = 0 Vdc, I = 250 Adc) 25 28 −GS DTemperature Coefficient (Positive) − − − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 20 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 20 Vdc, V = 0 Vdc, T = 150°C) − − 10DS GS JGate−Body Leakage Current I − − ±100 nAdcGSS(V = ±20 Vdc, V = 0 Vdc)GS DSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.7 2.0DS GS DThreshold Temperature Coefficient (Negative) − − − mV/°CStatic Drain−to−Source On−Resistance (Note 3) R mDS(on)(V = 4.5 Vdc, I = 10 Adc) − 18.6 23GS D(V = 10 Vdc, I = 10 Adc) − 12.6 16.5GS DForward Transconductance (Note 3) g MhosFS(V = 10 Vdc, I = 10 Adc) − 20 −DS DDYNAMIC CHARACTERISTICSInput Capacitance C − 584 − pFissOutput Capacitance C − 254 −( (V = 20 Vdc, V , = 0 V,) , f = 1 MHz)ossDS DS GS GSTransfer Capacitance C − 99 −rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 4.5 − nsd(on)Rise Time t − 19.5 −r( (V V = 10 Vdc, V = 10 Vdc, V = 10 Vdc, = 10 Vdc,GS GS DD DDI = 10 Adc, R = 3 )D GTurn−Off Delay Time t − 16.7 −d(off)Fall Time t − 3.5 −fGate Charge Q − 5.78 − nCT(V = 4.5 Vdc, I = 10 Adc,GS DQ − 2.1 −1V V = 10 Vdc = 10 Vdc) ) ( (Note Note 3 3) )DS DSQ − 2.5 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage VSD Vdc dc( (II = 10 Adc, V = 10 Adc, V = 0 Vdc = 0 Vdc) ) (Note (Note 3 3) )S S GS GS− 08 0.855 12 1.2(I = 10 Adc, V = 0 Vdc, T = 125°C)S GS J− 0.71 −Reverse Recovery Time t − 20.4 − nsrrt − 8.25 −a(I (I = 10 Adc, V = 10 Adc, V = 0 Vdc, = 0 Vdc,S S GS GSdI /dt = 100 A/s) (Note 3)St − 12.1 −bReverse Recovery Stored Charge Q − 0.007 − CRR3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
