NTD30N02T4 ,Power MOSFET 30 Amps, 24 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
NTD32N06G ,Power MOSFET 32 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD32N06LT4 ,Power MOSFET 32 Amps, 60 Volts, Logic Level N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD32N06T4G ,Power MOSFET 32 Amps, 60 Volts3R , DRAIN−TO−SOURCE RESISTANCE ()R , DRAIN−TO−SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)DS(on) DS ..
NTD40N03R ,Power MOSFET 45 Amps / 25 Volts / N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Ma ..
NTD40N03R-1G ,Power MOSFET 45 Amps, 25 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Ma ..
OR3T55-7BA256 , 3C and 3T Field-Programmable Gate Arrays
OR3T55-7PS208 , 3C and 3T Field-Programmable Gate Arrays
OR3T80-6PS240 , 3C and 3T Field-Programmable Gate Arrays
OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
NTD30N02-NTD30N02T4
Power MOSFET 30 Amps, 24 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS(V = 0 Vdc, I = 250 μAdc) 24 26.5 −GS DTemperature Coefficient (Positive) − 25.5 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 20 Vdc, V = 0 Vdc) − − 0.8DS GS(V = 24 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 20 Vdc, V = 0 Vdc, T = 125°C) − − 10DS GS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)(V = V , I = 250 μAdc) 1.0 2.1 3.0DS GS DThreshold Temperature Coefficient (Negative) − −4.1 − mV/°CStatic Drain−to−Source On−Resistance (Note 3) R mDS(on)(V = 10 Vdc, I = 30 Adc) − − 14.5GS D(V = 10 Vdc, I = 20 Adc) − 11.2 14.5GS D(V = 4.5 Vdc, I = 15 Adc) − 20 24GS DForward Transconductance (Note 3) (V = 10 Vdc, I = 15 Adc) g − 20 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 1000 − pFiss(V (V = 20 Vdc, V 20 Vd V = 0 Vdc, 0VdDS GSOutput CapacitanceC − 425 −ossf = 1.0 MHz f = 1.0 MHz) )Transfer Capacitance C − 175 −rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 7.0 15 nsd(on)Rise Time t − 28 55r(V (V = 20 Vdc, I 20 Vdc, I = 30 Adc, 30 Adc,DD DD D DV = 10 Vdc, R = 2.5 Ω)GS GTurn−Off Delay Time t − 22 35d(off)Fall Time t − 12 20fTurn−On Delay Time t − 12.5 − nsd(on)Rise Time t − 115 −r(V (V = 20 Vdc, I 20 Vdc, I = 15 Adc, 15 Adc,DD DD D DV = 4.5 Vdc, R = 2.5 Ω)GS GTurn−Off Delay Time t − 15 −d(off)Fall Time t − 17 −fGate Charge Q − 14.4 20 nCT(V (V = 20 Vdc, I 20 Vd I = 30 Adc, 30 AdDS DQ − 4.0 −1V V = 4.5 Vdc = 4.5 Vdc) ) ( (Note Note 3 3) )GS GSQ − 8.5 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 15 Adc, V = 0 Vdc) V − 0.95 1.2 VdcS GS SD(I = 30 Adc, V = 0 Vdc) (Note 3) − 1.10 −S GS(I = 15 Adc, V = 0 Vdc, T = 125°C) − 0.80 −S GS JReverse Recovery Time t − 30 − nsrr(I (I = 30 Adc, V 30 Ad V = 0 Vdc, 0VdS GSt − 14.5 −adI dI /dt /dt = 100 A/ = 100 A/μ μs s) ) ( (Note Note 3 3) )S St − 15.5 −bReverse Recovery Stored Charge Q − 0.013 − CRR3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
