NTD2955T4G ,Power MOSFET 12 A, 60 V P-Channel DPAK3R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE (Ω) −I DRAIN CURRENT (A)DS( ..
NTD3055-094 ,Power MOSFET 12 Amps, 60 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JMARKINGDIAGRAMSRating Symbol Value UnitDrain−to−S ..
NTD3055-094 ,Power MOSFET 12 Amps, 60 Volts3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on) D ..
NTD3055-094-1G ,Power MOSFET 12 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD3055-150 ,N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD3055-150 ,N-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitMARKINGDrain−to−Source Vo ..
OR2T40A-2PS208 , Field-Programmable Gate Arrays
OR2T40A-2PS208 , Field-Programmable Gate Arrays
OR2T40A-6BA352I , Field-Programmable Gate Arrays
OR2T40A-6BA352I , Field-Programmable Gate Arrays
OR2T40A-6PS208 , Field-Programmable Gate Arrays
OR3T125-6PS208 , 3C and 3T Field-Programmable Gate Arrays
NTD2955-NTD2955-1G-NTD2955G-NTD2955T4-NTD2955T4G
Power MOSFET 12 A, 60 V P-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS−60 − −(V = 0 Vdc, I = −0.25 mA)GS D− 67 − mV/°C(Positive Temperature Coefficient)Zero Gate Voltage Drain Current I AdcDSS− − −10(V = 0 Vdc, V = −60 Vdc, T = 25°C)GS DS J− − −100(V = 0 Vdc, V = −60 Vdc, T = 150°C)GS DS JGate−Body Leakage Current (V = ± 20 Vdc, V = 0 Vdc) I − − −100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V VdcGS(th)−2.0 −2.8 −4.0(V = V , I = −250 Adc)DS GS D− 4.5 − mV/°C(Negative Temperature Coefficient)Static Drain−Source On−State Resistance R DS(on)− 0.155 0.180(V = −10 Vdc, I = −6.0 Adc)GS DDrain−to−Source On−Voltage V VdcDS(on)−1.86 −2.6(V = −10 Vdc, I = −12 Adc)GS D− −2.0(V = −10 Vdc, I = −6.0 Adc, T = 150°C)GS D JForward Transconductance (V = 10 Vdc, I = 6.0 Adc) 8.0 − MhosDS D gFSDYNAMIC CHARACTERISTICSInput Capacitance C − 500 750 pFiss(V = −25 Vdc, V = 0 Vdc,DS GSOutput Capacitance C − 150 250ossF = 1.0 MHz F = 1.0 MHz) )Reverse Transfer Capacitance C − 50 100rssSWITCHING CHARACTERISTICS (Notes 3 and 4)Turn−On Delay Time t − 10 20 nsd(on)Rise Time t − 45 85r(V (V = −30 Vdc, I = −30 Vdc, I = −12 A, = −12 A,DD DD D DV = −10 V, R = 9.1 )GS GTurn−Off Delay Time t − 26 40d(off)Fall Time t − 48 90fGate Charge Q − 15 30 nCT(V = −48 Vdc, V = −10 Vdc, DS GSQ − 4.0 −GSII = −12 A = −12 A) )D DQ − 7.0 −GDDRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)Diode Forward On−Voltage V VdcSD− −1.6 −2.5(I = 12 Adc, V = 0 V)S GS− −1.3 −(I = 12 Adc, V = 0 V, T = 150°C)S GS JReverse Recovery Time t − 50 nsrr(I (I = 12 A, dI 12 A dI /dt /dt = 100 A/ 100 A/s ,V V = 0 V) 0V)S S GSt − 40 −at − 10 −bReverse Recovery Stored Charge Q − 0.10 − CRR3. Indicates Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperature.
