NTD23N03RT4 ,Power MOSFET 23A, 25V, N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Ma ..
NTD23N03RT4G ,Power MOSFET 23A, 25V, N-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise specified)J GParameter Symbol Value UnitDrain−to−Source ..
NTD24N06 ,Power MOSFET 24 Amps, 60 Volts N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD24N06L ,Power MOSFET 24 Amps, 60 Volts N-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
NTD24N06LT4G , Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD24N06T4G ,Power MOSFET 24 Amps, 60 Volts N-Channel DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on) D ..
OR2T15A-6S208 , Field-Programmable Gate Arrays
OR2T15B , Field-Programmable Gate Arrays
OR2T40A-2PS208 , Field-Programmable Gate Arrays
OR2T40A-2PS208 , Field-Programmable Gate Arrays
OR2T40A-6BA352I , Field-Programmable Gate Arrays
OR2T40A-6BA352I , Field-Programmable Gate Arrays
NTD23N03RG-NTD23N03RT4-NTD23N03RT4G
Power MOSFET 23A, 25V, N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V(br) VdcDSS(V = 0 Vdc, I = 250 Adc) 25 28 −GS DTemperature Coefficient (Positive) − − − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 20 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 20 Vdc, V = 0 Vdc, T = 150°C) − − 10DS GS JGate−Body Leakage Current I − − ±100 nAdcGSS(V = ±20 Vdc, V = 0 Vdc)GS DSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.8 2.0DS GS DThreshold Temperature Coefficient (Negative) − − − mV/°CStatic Drain−to−Source On−Resistance (Note 3) R mDS(on)(V = 4.5 Vdc, I = 6 Adc) − 50.3 60GS D(V = 10 Vdc, I = 6 Adc) − 32.3 45GS DForward Transconductance (Note 3) g MhosFS(V = 10 Vdc, I = 6 Adc) − 13 −DS DDYNAMIC CHARACTERISTICSInput Capacitance C − 225 − pFissOutput Capacitance C − 108 −(V ( = 20 Vdc, V , = 0 V,) , f = 1 MHz)ossDS DS GS GSTransfer Capacitance C − 48 −rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 2.0 − nsd(on)Rise Time t − 14.9 −r( (V V = 10 Vdc, V = 10 Vdc, V = 10 Vdc, = 10 Vdc,GS GS DD DDI = 6 Adc, R = 3 )D GTurn−Off Delay Time t − 9.9 −d(off)Fall Time t − 2.0 −fGate Charge Q − 3.76 − nCT(V = 4.5 Vdc, I = 6 Adc,GS DQ − 1.7 −1V V = 10 Vdc = 10 Vdc) ) ( (Note Note 3 3) )DS DSQ − 1.6 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage V VdcSD(I (I = 6 Adc, V = 6 Adc, V = 0 Vdc = 0 Vdc) ) ( (Note Note 3 3) )S S GS GS− 08 0.877 12 1.2(I = 6 Adc, V = 0 Vdc, T = 125°C)S GS J− 0.74 −Reverse Recovery Time t − 8.7 − nsrrt − 5.2 −a(I (I = 6 Adc, V = 6 Adc, V = 0 Vdc, = 0 Vdc,S S GS GSdI /dt = 100 A/s) (Note 3)St − 3.5 −bReverse Recovery Stored Charge Q − 0.003 − CRR3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
