NTD20N06L ,Power MOSFET 20 Amps, 60 Volts, Logic Level N-Channel DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω) I , DRAIN CURRENT (AMPS)DS(on)DS ..
NTD20N06LT4G , Power MOSFET 20 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD20N06T4 ,Power MOSFET 20 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD20N06T4G ,Power MOSFET 20 Amps, 60 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JDIAGRAMSRating Symbol Value Unit4Drain−to−Source ..
NTD20P06L ,Power MOSFET 60 V, 15 A, Single P-Channel DPAKMaximum ratings applied to the device are individual stress limit values (notORDERING INFORMATIONno ..
NTD20P06L ,Power MOSFET 60 V, 15 A, Single P-Channel DPAK2NTD20P06LTYPICAL PERFORMANCE CURVES(T = 25°C unless otherwise noted)J4040V = −6 VV = −10 VGS GST = ..
OR2T08A-4BA256 , Field-Programmable Gate Arrays
OR2T10A-2S208 , Field-Programmable Gate Arrays
OR2T15A-6S208 , Field-Programmable Gate Arrays
OR2T15B , Field-Programmable Gate Arrays
OR2T40A-2PS208 , Field-Programmable Gate Arrays
OR2T40A-2PS208 , Field-Programmable Gate Arrays
NTD20N06L
Power MOSFET 20 Amps, 60 Volts, Logic Level N-Channel DPAK
3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω) I , DRAIN CURRENT (AMPS)DS(on)DS(on) D(NORMALIZED)R , DRAIN−TO−SOURCE RESISTANCE (Ω)DS(on)I , LEAKAGE (nA)DSSI , DRAIN CURRENT (AMPS)DNTD20N06LPOWER MOSFET SWITCHINGSwitching behavior is most easily modeled and predicted The capacitance (C ) is read from the capacitance curve atissby recognizing that the power MOSFET is charge a voltage corresponding to the off−state condition whencontrolled. The lengths of various switching intervals (Δt) calculating t and is read at a voltage corresponding to thed(on)are determined by how fast the FET input capacitance can on−state when calculating t .d(off)be charged by current from the generator. At high switching speeds, parasitic circuit elementsThe published capacitance data is difficult to use for complicate the analysis. The inductance of the MOSFETcalculating rise and fall because drain−gate capacitance source lead, inside the package and in the circuit wiringvaries greatly with applied voltage. Accordingly, gate which is common to both the drain and gate current paths,charge data is used. In most cases, a satisfactory estimate of produces a voltage at the source which reduces the gate driveaverage input current (I ) can be made from a current. The voltage is determined by Ldi/dt, but since di/dtG(AV)rudimentary analysis of the drive circuit so that is a function of drain current, the mathematical solution iscomplex. The MOSFET output capacitance alsot = Q/IG(AV)complicates the mathematics. And finally, MOSFETs haveDuring the rise and fall time interval when switching afinite internal gate resistance which effectively adds to theresistive load, V remains virtually constant at a levelGSresistance of the driving source, but the internal resistanceknown as the plateau voltage, V . Therefore, rise and fallSGPis difficult to measure and, consequently, is not specified.times may be approximated by the following:The resistive switching time variation versus gatet = Q x R /(V − V )r 2 G GG GSP resistance (Figure 9) shows how typical switchingt = Q x R /Vf 2 G GSP performance is affected by the parasitic circuit elements. Ifthe parasitics were not present, the slope of the curves wouldwheremaintain a value of unity regardless of the switching speed.V = the gate drive voltage, which varies from zero to VGG GGThe circuit used to obtain the data is constructed to minimizeR = the gate drive resistanceGcommon inductance in the drain and gate circuit loops andand Q and V are read from the gate charge curve.2 GSPis believed readily achievable with board mountedDuring the turn−on and turn−off delay times, gate current iscomponents. Most power electronic loads are inductive; thenot constant. The simplest calculation uses appropriatedata in the figure is taken with a resistive load, whichvalues from the capacitance curves in a standard equation forapproximates an optimally snubbed inductive load. Powervoltage change in an RC network. The equations are:MOSFETs may be safely operated into an inductive load;however, snubbing reduces switching losses.t = R C In [V /(V − V )]d(on) G iss GG GG GSPt = R C In (V /V )d(off) G iss GG GSP2400V = 0 V V = 0 VDS GST = 25°CJ2000Ciss16001200CrssCiss800400CossCrss01055 0 10 15 20 25V VGS DSGATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)Figure 7. Capacitance Variation
