NTD14N03R ,Power MOSFET 14 A, 25 V N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JCharacteristics Symbol Min Typ Max ..
NTD15N06 ,Power MOSFET 15 Amps, 60 Volts3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on) D ..
NTD15N06L ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD15N06L-001 ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on) D ..
NTD15N06LT4G ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
NTD18N06L ,Power MOSFET 18 Amps, 60 Volts, Logic Level N-Channel DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on) D ..
OR2C26A-3PS208 , Field-Programmable Gate Arrays
OR2C26A-3PS240 , Field-Programmable Gate Arrays
OR2C40A-3PS208 , Field-Programmable Gate Arrays
OR2T04A-4T100 , Field-Programmable Gate Arrays
OR2T04A-4T144 , Field-Programmable Gate Arrays
OR2T04A-4T144 , Field-Programmable Gate Arrays
NTD14N03R
Power MOSFET 14 A, 25 V N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JCharacteristics Symbol Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage (Note 3) V(br) VdcDSS= 0 Vdc, I = 250 Adc) 25 28ï(VGS DTemperature Coefficient (Positive)ïïï mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 20 Vdc, V = 0 Vdc)ïï 1.0DS GS(V = 20 Vdc, V = 0 Vdc, T = 150°C)ïï 10DS GS JGateï Body Leakage Current Iïï ±100 nAdcGSS(V = ±20 Vdc, V = 0 Vdc)GS DSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.5 2.0DS GS DThreshold Temperature Coefficient (Negative)ïïï mV/°CStatic Drainï toï Source Onï Resistance (Note 3) RmDS(on)(V = 4.5 Vdc, I = 5 Adc)ï 117 130GS D(V = 10 Vdc, I = 5 Adc)ï 70.4 95GS DForward Transconductance (Note 3) g MhosFS(V = 10 Vdc, I = 5 Adc)ï 7.0ïDS DDYNAMIC CHARACTERISTICSInput Capacitance Cï 115ï pFissOutput Capacitance (V = 20 Vdc, V = 0 V, f = 1 MHz) Cï 62ïossDS GSTransfer Capacitance Cï 33ïrssSWITCHING CHARACTERISTICS (Note 4)nsTurnï On Delay Time tï 3.8ïd(on)Rise Time tï 27ïr(V = 10 Vdc, V = 10 Vdc,GS DDI = 5 Adc, R = 3 )D GTurnï Off Delay Time tï 9.6ïd(off)Fall Time tï 2.0ïfGate Charge Qï 1.8ï nCT(V = 5 Vdc, I = 5 Adc,GS DQï 0.8ï1V = 10 Vdc) (Note 3)DSQï 0.7ï2SOURCEï DRAIN DIODE CHARACTERISTICSForward Onï Voltage VSD Vdc(I = 5 Adc, V = 0 Vdc) (Note 3)S GSï 0.93 1.2(I = 5 Adc, V = 0 Vdc, T = 125°C)S GS Jï 0.82ïReverse Recovery Time tï 6.6ï nsrrtï 4.75ïa(I = 5 Adc, V = 0 Vdc,S GSdI /dt = 100 A/s) (Note 3)Stï 1.88ïbReverse Recovery Stored Charge Qï 0.002ï CRR3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
