NTD110N02RT4G ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAK2NTD110N02R175 21010 V5 VT = 25°CJ V ≥ 10 VDS8 V150 1804.5 V6 V125 1504.2 V4 V100 1203.8 V75 903.6 ..
NTD12N10G , Power MOSFET 12 Amps, 100 Volts
NTD12N10T4G ,Power MOSFET 12 Amps, 100 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
NTD14N03R ,Power MOSFET 14 A, 25 V N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JCharacteristics Symbol Min Typ Max ..
NTD15N06 ,Power MOSFET 15 Amps, 60 Volts3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on) D ..
NTD15N06L ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
OR2C15A-3BA256I , Field-Programmable Gate Arrays
OR2C15A-3S208 , Field-Programmable Gate Arrays
OR2C15A-3S240 , Field-Programmable Gate Arrays
OR2C26A-3PS208 , Field-Programmable Gate Arrays
OR2C26A-3PS240 , Field-Programmable Gate Arrays
OR2C40A-3PS208 , Field-Programmable Gate Arrays
NTD110N02R-NTD110N02R-001-NTD110N02R-001G-NTD110N02RG-NTD110N02RT4G
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V V(BR)DSS(V = 0 V, I = 250 A) 24 28GS DPositive Temperature Coefficient 15 mV/°CZero Gate Voltage Drain Current I ADSS(V = 20 V, V = 0 V) 1.5DS GS(V = 20 V, V = 0 V, T = 125°C) 10DS GS JGate−Body Leakage Current (V = ±20 V, V = 0 V) I ±100 nAGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VGS(th)(V = V , I = 250 A) 1.0 1.5 2.0DS GS DNegative Threshold Temperature Coefficient 5.0 mV/°CStatic Drain−to−Source On−Resistance (Note 3) R mDS(on)(V = 10 V, I = 110 A) 4.1GS D(V = 4.5 V, I = 55 A) 5.5GS D(V = 10 V, I = 20 A) 3.9 4.6GS D(V = 4.5 V, I = 20 A) 5.5 6.2GS DForward Transconductance (V = 10 V, I = 15 A) (Note 3) g 44 MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C 2710 3440 pFiss(V (V = 20 V 20 V, V V = 0 V 0V,DS GSOutput Capacitance C 1105 1670ossf = 1.0 MHz f = 1.0 MHz) )Transfer Capacitance C 450 640rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 11 22 nsd(on)Rise Time t 39 80r(V (V = 10 V 10 V, , V V = 10 V 10 V, , GS GS DD DDI = 40 A, R = 3.0 )D GTurn−Off Delay Time t 27 40d(off)Fall Time t 21 40fGate Charge Q 23.6 28 nCT(V (V = 4.5 V 45V, II = 40 A, 40 AGS DQ 5.1GSV V = 10 V = 10 V) ) ( (Note Note 3 3) )DS DSQ 11DSSOURCE−DRAIN DIODE CHARACTERISTICSForward On−V Forward On−Voltage oltage (I (I = 20 A, V = 20 A, V = 0 V) (Note 3) = 0 V) (Note 3) V V 0 0.82 .82 1 1.2 .2 V VS S GS GS S SD D(I (I = 55 A, V 55 A, V = 0 V) 0 V) 0.99 0.99S S GS GS(I = 20 A, V = 0 V, T = 125°C) 0.65S GS JReverse Recovery Time t 36.5 nsrr(I (I = 30 A, V 30 A V = 0 V 0V,S GSt 30adI dI /dt = 100 A/ /dt = 100 A/s s) ) ( (Note Note 3 3) )S St 25bReverse Recovery Stored Charge Q 0.048 Crr3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
