NTB90N02T4 ,Power MOSFET 90 Amps, 24 Volts N-Channel D2Pak and TO-2203R , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT ( ..
NTB90N02T4G , Power MOSFET 90 Amps, 24 Volts
NTD110N02R ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD110N02R-001 ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAKMaximum ratings applied to the device are individual stress limit values (not Gate Source1 2 3norma ..
NTD110N02R-001G ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
NTD110N02RG ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω) I , DRAIN CURRENT (AMPS)DS(on) D ..
OPI3020 , OPTICALLY COUPLED TRIAC DRIVERS
OPI3020 , OPTICALLY COUPLED TRIAC DRIVERS
OPI6100 , OPTICALLY COUPLED ISOLATORS HIGH V CEO
OPI6100 , OPTICALLY COUPLED ISOLATORS HIGH V CEO
OPR2100 , Six Element SMD Photodiode Array
OPR5005 , SMD REFLECTIVE SENSOR
NTB90N02-NTB90N02T4
Power MOSFET 90 Amps, 24 Volts N-Channel D2Pak and TO-220
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS24 27 −(V = 0 Vdc, I = 250 Adc)GS D− 25 − mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Drain Current I AdcDSS− − 1.0(V = 24 Vdc, V = 0 Vdc)DS GS− − 10(V = 24 Vdc, V = 0 Vdc, T = 150°C)DS GS JGate−Body Leakage Current (V = 20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)1.0 1.9 3.0(V = V , I = 250 Adc)DS GS D− −3.8 − mV/°CThreshold Temperature Coefficient (Negative)Static Drain−to−Source On−Resistance (Note 3) R mDS(on)− 5.0 5.8(V = 10 Vdc, I = 90 Adc)GS D− 7.5 9.0(V = 4.5 Vdc, I = 40 Adc)GS D− 5.0 5.8(V = 10 Vdc, I = 20 Adc)GS D− 7.5 9.0(V = 4.5 Vdc, I = 20 Adc)GS DForward Transconductance (Note 3) (V = 15 Vdc, I = 10 Adc) g − 25 − mhosDS D FSDYNAMIC CHARACTERISTICS(V = 20 Vdc, V = 0 Vdc, pFInput Capacitance C − 2120 −DS GS issf f = 1.0 MHz) 1 0 MHz)Output Capacitance C − 900 −ossTransfer Capacitance C − 360 −rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time (V = 20 Vdc, I = 20 Adc, t − 16 − nsDD D d(on)V V = 4.5 Vdc, R 4 5 Vdc R = 2.5 25 ) )GS GRise Time t − 90 −rTurn−Off Delay Time t − 28 −d(off)Fall Time t − 60 −fGate Charge (V = 20 Vdc, I = 20 Adc, nCQ − 29 −DS D TV V = 4.5 Vdc) (Note 3) 4 5 Vdc) (Note 3)GSQ − 8.0 −1Q − 20 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 2.3 Adc, V = 0 Vdc) V − 0.75 1.0 VdcS GS SD(I = 40 Adc, V = 0 Vdc) (Note 3) − 1.2 −S GS(I = 2.3 Adc, V = 0 Vdc, T = 150°C) − 0.65 −S GS JReverse Recovery Time (I = 2.3 Adc, V = 0 Vdc, nst − 40 −S GS rrdI dI /dt = 100 A/ /dt 100 A/s) (Note 3) s) (Note 3)St − 21 −at − 18 −bReverse Recovery Stored Charge Q − 0.036 − CRR3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
