NTB75N06T4G ,Power MOSFET 75 Amps, 60 Volts3R , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) R , DRAIN-TO-SOURCE RESISTANCE (Ω)I , DRAIN CURRENT (A ..
NTB85N03T4 ,Power MOSFET 85 Amps, 28 Volts3R , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE ()I , DRAIN CURRENT (A ..
NTB90N02 ,Power MOSFET 90 Amps, 24 Volts N-Channel D2Pak and TO-220ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTB90N02G , Power MOSFET 90 Amps, 24 Volts
NTB90N02T4 ,Power MOSFET 90 Amps, 24 Volts N-Channel D2Pak and TO-2203R , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT ( ..
NTB90N02T4G , Power MOSFET 90 Amps, 24 Volts
OPB706A , REFLECTIVE OBJECT SENSOR
OPB848 , SLOTTED OPTICAL SWITCHES
OPI3020 , OPTICALLY COUPLED TRIAC DRIVERS
OPI3020 , OPTICALLY COUPLED TRIAC DRIVERS
OPI6100 , OPTICALLY COUPLED ISOLATORS HIGH V CEO
OPI6100 , OPTICALLY COUPLED ISOLATORS HIGH V CEO
NTB75N06-NTB75N06G-NTB75N06L-NTB75N06T4G
Power MOSFET 75 Amps, 60 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain-to-Source Breakdown Voltage (Note 1) V Vdc(BR)DSS(V = 0 Vdc, I = 250 μAdc) 60 71 -GS DTemperature Coefficient (Positive) - 73 - mV/°CZero Gate Voltage Drain Current I μAdcDSS(V = 60 Vdc, V = 0 Vdc) - - 10DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) - - 100DS GS JGate-Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I - - ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 1)Gate Threshold Voltage (Note 1) V VdcGS(th)(V = V , I = 250 μAdc) 2.0 2.8 4.0DS GS DThreshold Temperature Coefficient (Negative) - 8.0 - mV/°CStatic Drain-to-Source On-Resistance (Note 1) R mOhmDS(on)(V = 10 Vdc, I = 37.5 Adc) - 8.2 9.5GS DStatic Drain-to-Source On-Voltage (Note 1) V VdcDS(on)(V = 10 Vdc, I = 75 Adc) - 0.72 0.86GS D(V = 10 Vdc, I = 37.5 Adc, T = 150°C) - 0.63 -GS D JForward Transconductance (Note 1) (V = 15 Vdc, I = 37.5 Adc) g - 40.2 - mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C - 3220 4510 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 Vdc, 0VdDS GSOutput CapacitanceC - 1020 1430ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C - 234 330rssSWITCHING CHARACTERISTICS (Note 2)Turn-On Delay Time t - 16 25 nsd(on)Rise Time t - 112 155r(V (V = 30 Vdc, I 30 Vdc, I = 75 Adc, 75 Adc,DD DD D DV = 10 Vdc, R = 9.1 Ω) (Note 1)GS GTurn-Of f Delay Time t - 90 125d(off)Fall Time t - 100 140fGate Charge Q - 92 130 nCT(V (V = 48 Vdc, I 48 Vd I = 75 Adc, 75 AdDS DQ - 14 -1V V = 10 Vdc = 10 Vdc) ) ( (Note Note 1 1) )GS GSQ - 44 -2SOURCE-DRAIN DIODE CHARACTERISTICSForward On-Voltage (I = 75 Adc, V = 0 Vdc) (Note 1) V - 1.0 1.1 VdcS GS SD(I = 75 Adc, V = 0 Vdc, T = 150°C) - 0.9 -S GS JReverse Recovery Time t - 77 - nsrr(I (I = 75 Adc, V 75 Ad V = 0 Vdc, 0VdS GSt - 49 -adI dI /dt = 100 A/ /dt = 100 A/μ μs) s) ( (Note Note 1 1) )S St - 28 -bReverse Recovery Stored Charge Q - 0.16 - μCRR1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.2. Switching characteristics are independent of operating junction temperatures.
