NTP75N03L09 ,Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
NTP75N06G ,Power MOSFET 75 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP75N06L ,Power MOSFET 75 Amps, 60 Volts, Logic LevelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP85N03 ,Power MOSFET 85 Amps, 28 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP90N02 ,Power MOSFET 90 Amps / 24 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTQD6866R2 ,Power MOSFET 6.9 Amps, 20 Volts N-Channel TSSOP-8MAXIMUM RATINGS (T = 25°C unless otherwise noted)G1 G2CRating Symbol Value UnitS1 S2Drain–to–Source ..
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTB75N03L09-NTB75N03L09G-NTB75N03L09T4-NTP75N03L09
Power MOSFET 75 Amps, 30 Volts N-Channel D2PAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−Source Breakdown Voltage (Note 2) V(BR)DSS30 34 − Vdc(V = 0 Vdc, I = 250 Adc)GS D−57 − mV°CTemperature Coefficient (Negative)Zero Gate Voltage Drain Current I AdcDSS− − 1.0(V = 30 Vdc, V = 0 Vdc)DS GS− − 10(V = 30 Vdc, V = 0 Vdc, T = 150°C)DS GS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 2)Gate Threshold Voltage (Note 2) VGS(th)1.0 1.6 2.0 Vdc(V = V , I = 250 Adc)DS GS D− −6 − mV°CThreshold Temperature Coefficient (Negative)Static Drain−to−Source On−Resistance (Note 2) R mDS(on)− 6.5 8.0(V = 5.0 Vdc, I = 37.5 Adc)GS DStatic Drain−to−Source On Resistance (Note 2) V VdcDS(on)− 0.52 0.68(V = 10 Vdc, I = 75 Adc)GS D− 0.35 0.50(V = 10 Vdc, I = 37.5 Adc, T = 125°C)GS D JForward Transconductance (Notes 2 & 4) (V = 3 Vdc, I = 20 Adc) g − 58 − mDS D FSDYNAMIC CHARACTERISTICS (Note 4)Input Capacitance C − 4398 5635 pFiss(V (V = 25 Vdc, V 25 Vdc V = 0, 0DS GSOutput Capacitance C − 1160 1894ossf f = 1.0 MHz) 1.0 MHz)Transfer Capacitance C − 317 430rssSWITCHING CHARACTERISTICS (Notes 3 & 4)Turn−On Delay Time t − 16 30 nsd(on)(V (V = 5.0 Vdc, 5 0 VdcGSRise Time t − 130 200rV V = 20 Vdc, I 20 Vdc, I = 75 Adc, 75 Adc,DD DD D DR = 4.7 ) (Note 2) )( )GTurn−Off Delay Time t − 65 110d(off)Fall Time t − 105 175fGate Charge (V = 5.0 Vdc, Q − 57 75 nCGS TII = 75 Adc, 75 AdcDQ − 11 151V V = 24 Vdc) (Note 2) 24 Vdc) (Note 2)DS DSQ − 34 502SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 75 Adc, V = 0 Vdc) V − 1.19 1.25 VdcS GS SD(I = 75 Adc, V = 0 Vdc, T = 125°C) − 1.09 −S GS J(Note 2)Reverse Recovery Time t − 37 − nsrr(Note 4) (Note 4) (I (I = 75 Adc, V 75 Adc V = 0 Vdc 0 VdcS GSt − 20 −dl dl /dt /dt = 100 A/ 100 A/s) s) (Note 2) (Note 2) aS SReverse Recovery Stored t − 17 − CbCharge Charge (Note 4) (Note 4)Q − 0.023 −RR2. Pulse Test: Pulse Width 300 S, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.4. From characterization test data.
