NTB6413AN ,Power MOSFET, 100 V, 42 A, 28 mΩ, N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB6413ANG , N-Channel Power MOSFET 100 V, 42 A, 28 mΩ
NTB6413ANT4G , N-Channel Power MOSFET 100 V, 42 A, 28 mΩ
NTB65N02RT4G , Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK
NTB75N03L09 ,Power MOSFET 75 Amps, 30 Volts N-Channel D2PAKMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
NTB75N03L09G ,Power MOSFET 75 Amps, 30 Volts N-Channel D2PAK3NTP75N03L09, NTB75N03L09120 150V = 4 VGS135 V ≥ 10 VV = 3.5 V DSGSV = 4.5 VGS12090V = 5 VGS105V = ..
OPA875 ,Single 2:1 High-Speed Video MultiplexerELECTRICAL CHARACTERISTICS: V = ±5V (continued)SAt G = +2 and R = 150Ω, unless otherwise noted.LOPA ..
OPA875IDG4 ,Single 2:1 High-Speed Video Multiplexer 8-SOIC FEATURES DESCRIPTION2• 700MHz SMALL-SIGNAL BANDWIDTHThe OPA875 offers a very wideband, single-chann ..
OPA875IDGKR ,Single 2:1 High-Speed Video Multiplexer 8-VSSOP ELECTRICAL CHARACTERISTICS: V = ±5VSAt G = +2 and R = 150Ω, unless otherwise noted.LOPA875MIN/MAX O ..
OPA875IDGKTG4 ,Single 2:1 High-Speed Video Multiplexer 8-VSSOP MAXIMUM RATINGSOver operating temperature range, unless otherwise noted.OPA875 UNITPower Supply ±6. ..
OPA875IDR ,Single 2:1 High-Speed Video Multiplexer 8-SOIC This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated cir ..
OPA890ID ,Low Power, Wideband, Voltage Feedback Operational Amplifier with Disable 8-SOIC -40 to 85ELECTRICAL CHARACTERISTICS: V = ±5VSBoldface limits are tested at +25°C.At R = 750Ω, G = +2V/V, and ..
NTB6413AN
Power MOSFET, 100 V, 42 A, 28 mΩ, N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 100 V(BR)DSS GS DDrainï toï Source Breakdown Voltage Temper- V /T 115 mV/°C(BR)DSS Jature CoefficientZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0 ADSS GS JV = 100 VDST = 125°C 100JGateï toï Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(th) GS DS DNegative Threshold Temperature Coefficient V /T 8.1 mV/°CGS(th) JDrainï toï Source Onï Resistance R V = 10 V, I = 42 A 25.6 28 mDS(on) GS DForward Transconductance g V = 5 V, I = 20 A 17.9 SFS GS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 1800 pFissV = 25 V, V = 0 V,DS GSOutput Capacitance C 280ossf = 1 MHzReverse Transfer Capacitance C 100rssTotal Gate Charge Q 51 nCG(TOT)Threshold Gate Charge Q 2.0G(TH)V = 10 V, V = 80 V,GS DSGateï toï Source Charge Q 10GSI = 42 ADGateï toï Drain Charge Q 26GDPlateau Voltage V 5.8 VGPGate Resistance R 2.4 GSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurnï On Delay Time t 13 nsd(on)Rise Time t 84rV = 10 V, V = 80 V,GS DDI = 42 A, R = 6.2D GTurnï Off Delay Time t 52d(off)Fall Time t 71fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.92 1.3 VSDJI = 42 AST = 125°C 0.83JnsReverse Recovery Time t 73rrCharge Time t 56aV = 0 V, I = 42 A,GS SdI /dt = 100 A/sSDDischarge Time t 17bReverse Recovery Charge Q 230 nCRR2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
